參數(shù)資料
型號： IRFP450B
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 500V N-Channel MOSFET
中文描述： 14 A, 500 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-3P, 3 PIN
文件頁數(shù)： 1/8頁
文件大小： 707K
代理商： IRFP450B
2001 Fairchild Semiconductor Corporation
November 2001
Rev. B, November 2001
I
IRFP450B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
Features
14A, 500V, R
DS(on)
= 0.39
@V
GS
= 10 V
Low gate charge ( typical 87 nC)
Low Crss ( typical 60 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
IRFP450B
500
14
8.8
56
±
30
990
14
20.5
5.5
205
1.64
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
Typ
--
0.24
--
Max
0.61
--
40
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
●
●
●
●
●
▲
!
S
!
!
!
D
G
TO-3P
IRFP Series
G
S
D
相關PDF資料
PDF描述
IRFP450 N-Channel Power MOSFET(N溝道增強型功率MOS場效應管（漏源電壓為500V，導通電阻為0.4Ω，漏電流為14A）)
IRFP460 N-Channel Power MOSFET(N溝道增強型功率MOS場效應管（漏源電壓為500V，導通電阻為0.25Ω，漏電流為22A）)
IRFR014 N-Channel Power MOSFET(N溝道增強型功率MOS場效應管（漏源電壓為60V，導通電阻為0.14Ω，漏電流為8.2A）)
IRFR310 N-Channel Power MOSFET（1.7A，400V，3.6Ω）(N溝道功率MOS場效應管（漏電流1.7A, 漏源電壓400V，導通電阻3.6Ω）)
IRFR9024 P-Channel Enhancement Mode Field Effect Transistor（-8.8A，-60V，0.28Ω）(P溝道增強型MOS場效應管（漏電流-8.8A, 漏源電壓-60V，導通電阻0.28Ω）)
相關代理商/技術參數(shù)
參數(shù)描述
IRFP450-EPBF 功能描述:MOSFET N-Chan 500V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP450FI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 9A I(D) | TO-218VAR
IRFP450LC 功能描述:MOSFET N-Chan 500V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP450LCPBF 功能描述:MOSFET N-Chan 500V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP450N 制造商:International Rectifier 功能描述:MOSFET Transistor, N-Channel, TO-247AC
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