- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378637 > IRFR014 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場效應(yīng)管（漏源電壓為60V，導(dǎo)通電阻為0.14Ω，漏電流為8.2A）) PDF資料下載
參數(shù)資料
| 型號： | IRFR014 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場效應(yīng)管（漏源電壓為60V，導(dǎo)通電阻為0.14Ω，漏電流為8.2A）) |
| 中文描述： | 8.2 A, 60 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 219K |
| 代理商： | IRFR014 |
IRFR014
BV
DSS
= 60 V
R
DS(on)
= 0.14
I
D
= 8.2 A
60
8.2
5.2
33
±
20
58
8.2
1.8
5.5
2.5
18
0.14
- 55 to +150
300
7.04
50
110
--
--
--
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10
μ
A (Max.) @ V
DS
= 60V
Lower R
DS(ON)
: 0.097
(Typ.)
$GYDQFHG 3RZHU 026)(7
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
θ
JC
R
θ
JA
R
θ
JA
°
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
*
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
°
C)
Continuous Drain Current (T
C
=100
°
C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (T
A
=25
°
C)
Total Power Dissipation (T
C
=25
°
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
°
C
A
°
C
*
D-PAK
1. Gate 2. Drain 3. Source
1
2
3
I-PAK
1
3
2
1999 Fairchild Semiconductor Corporation
Rev. B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFR310 | N-Channel Power MOSFET（1.7A，400V，3.6Ω）(N溝道功率MOS場效應(yīng)管（漏電流1.7A, 漏源電壓400V，導(dǎo)通電阻3.6Ω）) |
| IRFR9024 | P-Channel Enhancement Mode Field Effect Transistor（-8.8A，-60V，0.28Ω）(P溝道增強(qiáng)型MOS場效應(yīng)管（漏電流-8.8A, 漏源電壓-60V，導(dǎo)通電阻0.28Ω）) |
| IRFS240B | 200V N-Channel MOSFET |
| IRFS244B | 250V N-Channel MOSFET |
| IRFS250 | 200V N-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFR014_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| IRFR014A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8.2A I(D) | TO-252AA |
| IRFR014PBF | 功能描述:MOSFET N-Chan 60V 7.7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR014TR | 功能描述:MOSFET N-Chan 60V 7.7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR014TRL | 功能描述:MOSFET N-Chan 60V 7.7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。