參數(shù)資料
型號： IRFP254B
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 250V N-Channel MOSFET
中文描述： 25 A, 250 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-3P, 3 PIN
文件頁數(shù)： 1/8頁
文件大?。?/td> 670K
代理商： IRFP254B
2001 Fairchild Semiconductor Corporation
November 2001
Rev. C, November 2001
I
IRFP254B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters and
switch mode power supplies.
Features
25A, 250V, R
DS(on)
= 0.14
@V
GS
= 10 V
Low gate charge ( typical 95 nC)
Low Crss ( typical 60 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
IRFP254B
250
25
15.9
100
±
30
700
25
22.1
5.5
221
1.79
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
Typ
--
0.24
--
Max
0.56
--
40
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
●
●
●
●
●
▲
!
!
S
!
!
D
G
TO-3P
IRFP Series
G
S
D
相關(guān)PDF資料
PDF描述
IRFP440B 500V N-Channel MOSFET
IRFP450A N-Channel Power MOSFET(N溝道增強型功率MOS場效應(yīng)管（漏源電壓為500V，導(dǎo)通電阻為0.4Ω，漏電流為14A）)
IRFP450B 500V N-Channel MOSFET
IRFP450 N-Channel Power MOSFET(N溝道增強型功率MOS場效應(yīng)管（漏源電壓為500V，導(dǎo)通電阻為0.4Ω，漏電流為14A）)
IRFP460 N-Channel Power MOSFET(N溝道增強型功率MOS場效應(yīng)管（漏源電壓為500V，導(dǎo)通電阻為0.25Ω，漏電流為22A）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFP254B_FP001 功能描述:MOSFET 250V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP254BFP001 制造商:Fairchild Semiconductor Corporation 功能描述:
IRFP254N 功能描述:MOSFET N-Chan 250V 23 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP254NPBF 功能描述:MOSFET N-Chan 250V 23 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP254PBF 功能描述:MOSFET N-Chan 250V 23 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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