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參數(shù)資料
| 型號(hào)： | IRF820AS |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | JFETs |
| 英文描述： | 2.5 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D2PAK-3 |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大?。?/td> | 162K |
| 代理商： | IRF820AS |
IRF820AS/L
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
1.4
–––
S
VDS = 50V, ID = 1.5A
Qg
Total Gate Charge
–––
17
ID = 2.5A
Qgs
Gate-to-Source Charge
–––
4.3
nC
VDS = 400V
Qgd
Gate-to-Drain ("Miller") Charge
–––
8.5
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
8.1
–––
VDD = 250V
tr
Rise Time
–––
12
–––
ID = 2.5A
td(off)
Turn-Off Delay Time
–––
16
–––
RG = 21
tf
Fall Time
–––
13
–––
RD = 97,See Fig. 10
Ciss
Input Capacitance
–––
340
–––
VGS = 0V
Coss
Output Capacitance
–––
53
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
2.7
–––
pF
= 1.0MHz, See Fig. 5
Coss
Output Capacitance
–––
490
–––
VGS = 0V, VDS = 1.0V, = 1.0MHz
Coss
Output Capacitance
–––
15
–––
VGS = 0V, VDS = 400V, = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
28
–––
VGS = 0V, VDS = 0V to 400V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
–––
140
mJ
IAR
Avalanche Current
–––
2.5
A
EAR
Repetitive Avalanche Energy
–––
5.0
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
1.6
V
TJ = 25°C, IS = 2.5A, VGS = 0V
trr
Reverse Recovery Time
–––
330
500
ns
TJ = 25°C, IF = 2.5A
Qrr
Reverse RecoveryCharge
–––
760 1140
nC
di/dt = 100A/s
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
2.5
10
A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
500
–––
V
VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.60
–––
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
3.0
VGS = 10V, ID = 1.5A
VGS(th)
Gate Threshold Voltage
2.0
–––
4.5
V
VDS = VGS, ID = 250A
–––
25
A
VDS = 500V, VGS = 0V
–––
250
VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
100
VGS = 30V
Gate-to-Source Reverse Leakage
–––
-100
nA
VGS = -30V
IGSS
IDSS
Drain-to-Source Leakage Current
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
2.5
°C/W
RθJA
Junction-to-Ambient ( PCB Mounted, steady-state)*
–––
62
Thermal Resistance
Document Number: 90089
www.vishay.com
2
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