參數(shù)資料
型號： IRF7422D2
英文描述： TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 4.6A I(D) | SO
中文描述： 晶體管| MOSFET的| P通道| 20V的五（巴西）直| 4.6AI（四）|蘇
文件頁數(shù)： 1/10頁
文件大?。?/td> 149K
代理商： IRF7422D2
N-Ch P-Ch
V
DSS
55V
-55V
R
DS(on)
0.050
0.105
PRELIMINARY
HEXFET
Power MOSFET
PD - 9.1709
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
10/29/97
SO-8
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual N and P Channel MOSFET
l
Surface Mount
l
Fully Avalanche Rated
IRF7343
Description
D1
N -C H AN N EL M OSF ET
1
P-C H ANN EL MO SFE T
D1
D2
D2
G 1
S2
G 2
S1
Top View
8
2
3
4
5
6
7
Max.
N-Channel
55
4.7
3.8
38
P-Channel
-55
-3.4
-2.7
-27
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
E
AS
I
AR
E
AR
V
GS
dv/dt
T
J,
T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
2.0
1.3
W
W
mJ
A
mJ
V
V/ns
°C
72
4.7
114
-3.4
0.20
± 20
5.0
-5.0
-55 to + 150
Parameter
A
Absolute Maximum Ratings
Parameter
Typ.
–––
Max.
62.5
Units
°C/W
R
θ
JA
Maximum Junction-to-Ambient
Thermal Resistance
相關(guān)PDF資料
PDF描述
IRF742FI TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-220AB
IRF7343 Dual N and P Channel MOSFET(雙 N溝道 和P溝道 MOS場效應(yīng)管)
IRF750A TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 15A I(D) | TO-220AB
IRF7756 TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 12V V(BR)DSS | 4.3A I(D) | TSOP
IRF7809 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 17A I(D) | SO
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7422D2HR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 4.3A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 20V 4.3A 8SOIC - Rail/Tube
IRF7422D2PBF 功能描述:MOSFET 20V FETKY 12 VGS 140 RDS 2.7VmOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7422D2TR 功能描述:MOSFET P-CH 20V 4.3A 8-SOIC RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:FETKY™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRF7422D2TRPBF 功能描述:MOSFET MOSFT PCh w/Schttky -4.3A 90mOhm 15nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7423TR 功能描述:MOSFET N-CH 30V 8-SOIC RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*