參數(shù)資料
型號： IRF7420
英文描述： -12V Single P-Channel HEXFET Power MOSFET in a SO-8 package
中文描述： - 12V的單P溝道HEXFET功率MOSFET的SO - 8封裝
文件頁數(shù)： 2/10頁
文件大?。?/td> 149K
代理商： IRF7420
IRF7343
Surface mounted on FR-4 board, t
≤
10sec.
Parameter
Min. Typ. Max. Units
N-Ch 55
—
P-Ch -55
—
N-Ch
— 0.059
P-Ch
— 0.054
— 0.0430.050
— 0.0560.065
— 0.0950.105
— 0.1500.170
N-Ch 1.0
—
P-Ch -1.0
—
N-Ch 7.9
—
P-Ch 3.3
—
N-Ch
—
—
P-Ch
—
—
N-Ch
—
—
P-Ch
—
—
N-P
––
—
N-Ch
—
24
P-Ch
—
26
N-Ch
—
2.3
P-Ch
—
3.0
N-Ch
—
7.0
P-Ch
—
8.4
N-Ch
—
8.3
P-Ch
—
14
N-Ch
—
3.2
P-Ch
—
10
N-Ch
—
32
P-Ch
—
43
N-Ch
—
13
P-Ch
—
22
N-Ch
—
740
P-Ch
—
690
N-Ch
—
190
P-Ch
—
210
N-Ch
—
71
P-Ch
—
86
Conditions
—
—
—
—
V
GS
= 0V, I
D
= 250μA
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= 1mA
Reference to 25°C, I
D
= -1mA
V
GS
= 10V, I
D
= 4.5A
V
GS
= 4.5V, I
D
= 3.8A
V
GS
= -10V, I
D
= -3.1A
V
GS
= -4.5V, I
D
= -2.6A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= V
GS
, I
D
= -250μA
V
DS
= 10V, I
D
= 4.5A
V
DS
= -10V, I
D
= -3.1A
V
DS
= 55V, V
GS
= 0V
V
DS
= -55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 55°C
V
DS
= -55V, V
GS
= 0V, T
J
= 55°C
V
GS
= ±20V
—
—
—
—
2.0
-2.0
25
-25
±100
36
38
3.4
4.5
10
13
12
22
4.8
15
48
64
20
32
—
—
—
—
—
—
I
GSS
Q
g
Gate-to-Source Forward Leakage
pF
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
V/°C
V
S
μA
nC
ns
N-Channel
I
D
= 4.5A, V
DS
= 44V, V
GS
= 10V
P-Channel
I
D
= -3.1A, V
DS
= -44V, V
GS
= -10V
N-Channel
V
DD
= 28V, I
D
= 1.0A, R
G
= 6.0
,
R
D
= 16
P-Channel
V
DD
= -28V, I
D
= -1.0A, R
G
= 6.0
,
R
D
= 16
N-Channel
V
GS
= 0V, V
DS
= 25V, = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -25V, = 1.0MHz
N-Ch
P-Ch
Parameter
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
0.70
—
-0.80 -1.2
—
60
—
54
—
120
—
85
Conditions
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
2.0
-2.0
36
-25
1.2
T
J
= 25°C, I
S
= 2.0A, V
GS
= 0V
T
J
= 25°C, I
S
= -2.0A, V
GS
= 0V
N-Channel
T
= 25°C, I
F
=2.0A, di/dt = 100A/μs
P-Channel
T
J
= 25°C, I
F
= -2.0A, di/dt = 100A/μs
90
80
170
130
Source-Drain Ratings and Characteristics
I
S
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
A
V
ns
nC
N-Channel I
SD
≤
4.7A, di/dt
≤
220A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
P-Channel I
SD
≤
-3.4A, di/dt
≤
-150A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
N-Channel Starting T
J
= 25°C, L = 6.5mH R
G
= 25
, I
AS
= 4.7A.
P-Channel Starting T
J
= 25°C, L = 20mH R
G
= 25
, I
AS
= -3.4A.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 22 )
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
nA
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