參數(shù)資料
型號： IRF7106
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=+-20V)
中文描述： 功率MOSFET（減振鋼板基本\u003d - 20V的）
文件頁數(shù)： 2/7頁
文件大?。?/td> 158K
代理商： IRF7106
70
IRF7106
Parameter
Min. Typ. Max. Units
20
—
P-Ch -20
—
N-Ch
— 0.037
P-Ch
— -0.022 —
—
— 0.125
—
—
—
—
—
—
N-Ch 1.0
—
P-Ch -1.0
—
N-Ch
—
4.4
P-Ch
—
3.0
N-Ch
—
—
P-Ch
—
—
N-Ch
—
—
P-Ch
—
—
N-P
––
—
N-Ch
—
9.1
P-Ch
—
11
N-Ch
—
1.2
P-Ch
—
1.6
N-Ch
—
2.5
P-Ch
—
3.5
N-Ch
—
5.0
P-Ch
—
10
N-Ch
—
10
P-Ch
—
15
N-Ch
—
29
P-Ch
—
41
N-Ch
—
22
P-Ch
—
39
N-P
—
4.0
N-P
—
6.0
N-Ch
—
300
P-Ch
—
280
N-Ch
—
260
P-Ch
—
250
N-Ch
—
62
P-Ch
—
86
Conditions
N-Ch
—
—
—
V
GS
= 0V, I
D
= 250μA
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= 1mA
Reference to 25°C, I
D
= -1mA
V
GS
= 10V, I
D
= 1.0A
V
GS
= 4.5V, I
D
= 0.50A
V
GS
= -10V, I
D
= -1.0A
V
GS
= -4.5V, I
D
= -0.50A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= V
GS
, I
D
= -250μA
V
DS
= 15V, I
D
= 3.0A
V
DS
= -15V, I
D
= -3.0A
V
DS
= 16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
V
GS
= ± 20V
0.25
0.20
0.35
—
—
—
—
2.0
-2.0
25
-25
±100
25
25
—
—
—
—
15
40
20
40
50
90
50
60
—
—
—
—
—
—
—
—
I
GSS
Q
g
Gate-to-Source Forward Leakage
nA
L
D
L
S
C
iss
Internal Drain Inductace
Internal Source Inductance
Between lead tip
and center of die contact
Parameter
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
0.90
—
-0.90 -1.6
—
69
—
69
—
58
—
91
Intrinsic turn-on time is neglegible (turn-on is dominated by L
S
+L
D
)
Conditions
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
1.7
-1.6
10
-10
1.2
T
J
= 25°C, I
S
= 1.6A, V
GS
= 0V
T
J
= 25°C, I
S
= -1.3A, V
GS
= 0V
N-Channel
T
= 25°C, I
F
= 1.25A, di/dt = 100A/μs
P-Channel
T
= 25°C, I
= -1.25A, di/dt = 100A/μs
100
100
120
180
t
on
Forward Turn-On Time
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
Imput Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Source-Drain Ratings and Characteristics
V
V/°C
V
S
μA
nC
ns
nH
pF
N-Channel
I
D
= 2.3A, V
DS
= 10V, V
GS
= 10V
P-Channel
I
D
= -2.3A, V
DS
= -10V, V
GS
= -10V
N-Channel
V
DD
= 20V, I
D
= 1.0A, R
G
= 6.0
,
R
D
= 20
P-Channel
V
DD
= -20V, I
D
= -1.0A, R
G
= 6.0
,
R
D
= 20
N-Channel
V
GS
= 0V, V
DS
= 15V, = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -15V, = 1.0MHz
N-Ch
P-Ch
I
S
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
A
V
ns
nC
N-Channel I
SD
≤
2.3A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
P-Channel I
SD
≤
-2.3A, di/dt
≤
50A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 23 )
Notes:
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