參數(shù)資料
型號: IRF7106
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=+-20V)
中文描述: 功率MOSFET(減振鋼板基本\u003d - 20V的)
文件頁數(shù): 1/7頁
文件大?。?/td> 158K
代理商: IRF7106
N-Ch
P-Ch
V
DSS
20V
-20V
R
DS(on)
0.125
0.20
I
D
3.0A
-2.5A
IRF7106
HEXFET
Power MOSFET
PD - 9.1098B
Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design for which HEXFET Power MOSFETs are well known, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for
vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
D1
N-CHANNEL MOSFET
1
P-CHANNEL MOSFET
D1
D2
D2
G1
S2
G2
S1
Top View
8
2
3
4
5
6
7
PRELIMINARY
Absolute Maximum Ratings
Parameter
Units
Max.
N-Channel
3.0
2.5
10
P-Channel
-2.5
-2.0
-10
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
A
2.0
0.016
± 20
V
GS
dv/dt
T
J,
T
STG
V
3.0
-3.0
V/ns
°C
-55 to + 150
W
W/°C
SO-8
Thermal Resistance
Parameter
Min.
––––
Typ.
––––
Max.
62.5
Units
°C/W
R
θ
JA
Junction-to-Ambient (PCB Mount)**
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Revision 3
69
相關(guān)PDF資料
PDF描述
IRF710SPBF HEXFET㈢ Power MOSFET
IRF7207PBF HEXFET㈢ Power MOSFET
IRF7210PBF HEXFET Power MOSFET
IRF7240PBF HEXFET Power MOSFET
IRF7303PBF HEXFET Power MOSFET (VDSS = 30V , RDS(on) = 0.050ヘ )
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7107 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET
IRF710-713 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 2.25A, 350-400V
IRF710A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2A I(D) | TO-220AB
IRF710B 功能描述:MOSFET 400V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF710L 功能描述:MOSFET N-CH 400V 2A TO-262 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件