參數(shù)資料
型號(hào): IRF7210PBF
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁(yè)數(shù): 1/7頁(yè)
文件大?。?/td> 557K
代理商: IRF7210PBF
Parameter
Max.
-12
±16
±12
±100
2.5
1.6
0.02
± 12
16
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10μs
Junction and Storage Temperature Range
A
W/°C
V
V
°C
V
GS
V
GSM
T
J,
T
STG
-55 to + 150
08/19/05
IRF7210PbF
HEXFET Power MOSFET
Parameter
Max.
50
Units
°C/W
R
θ
JA
www.irf.com
Maximum Junction-to-Ambient
Thermal Resistance
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques.
V
DSS
= -12V
R
DS(on)
= 0.007
Description
1
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
Top View
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
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參數(shù)描述
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