參數(shù)資料
型號(hào)： IRF7210PBF
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 2/7頁
文件大小： 557K
代理商： IRF7210PBF
IRF7210PbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
-14
–––
-12
–––
––– 0.011 –––
–––
.005 .007
.007 .010
-0.6
–––
16
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
212
–––
27
–––
52
–––
50
–––
3.0
–––
6.5
–––
30
––– 17179 –––
––– 9455 –––
––– 8986 –––
Conditions
V
(BR)DSS
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
–––
–––
V
V
V
GS
= 0V, I
D
= -5.0mA
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -4.5V, I
D
= -16A
V
GS
= -2.5V, I
D
= -12A
V
DS
= V
GS
, I
D
= -500μA
V
DS
= -10V, I
D
= -16A
V
DS
= -12V, V
GS
= 0V
V
DS
= -9.6V, V
GS
= 0V
V
DS
= -12V, V
GS
= 0V, T
J
= 70°C
V
GS
= -12V
V
GS
= 12V
I
D
= -10A
V
DS
= -10V
V
GS
= -5.0V
V
DD
= -10V
I
D
= -10A
R
D
= 1.0
R
G
= 6.2
V
GS
= 0V
V
DS
= -10V
= 1.0kHz
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
–––
–––
-10
-1.0
-100
-100
100
–––
–––
–––
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
ns
pF
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
300μs; duty cycle
≤
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -2.5A, V
GS
= 0V
T
J
= 25°C, I
F
= -2.5A
di/dt = 85A/μs
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
165
296
-1.2
247
444
V
ns
nC
Source-Drain Ratings and Characteristics
-100
-2.5
When mounted on 1 inch square copper board, t<10 sec
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
μA
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
μs
S
D
G
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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