參數(shù)資料
型號(hào): IRF7104
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁(yè)數(shù): 4/9頁(yè)
文件大?。?/td> 158K
代理商: IRF7104
IRF7104
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
D
S
G
-V
DS
, Drain-to-Source Voltage ( V )
Q
G
, Total Gate Charge ( nC )
-V
SD
, Source-to-Drain Voltage ( V )
-V
DS
, Drain-to-Source Voltage ( V )
SEE FIGURE 12
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參數(shù)描述
IRF7104HR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 2.3A 8-Pin SOIC
IRF7104PBF 功能描述:MOSFET DUAL -20V P-CH HEXFET 7.5mOhms 63nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7104TR 制造商:Int'L Rectifier 功能描述:Trans MOSFET P-CH 20V 2.3A 8-Pin SOIC T/R
IRF7104TRHR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 2.3A 8-Pin SOIC T/R
IRF7104TRPBF 功能描述:MOSFET MOSFT DUAL PCh -20V 2.3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube