參數(shù)資料
型號(hào)： IRF7104
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁(yè)數(shù)： 2/9頁(yè)
文件大小： 158K
代理商： IRF7104
IRF7104
Parameter
Min. Typ. Max. Units
-20
–––
––– -0.015 –––
–––
0.19 0.25
–––
0.30 0.40
-1.0
–––
–––
2.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.3
–––
1.6
–––
3.0
–––
12
–––
16
–––
42
–––
30
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -1.0A
V
GS
= -4.5V, I
D
= -0.50A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -15V, I
D
= -2.3A
V
DS
= -16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V, T
J
= 55 °C
V
GS
= -12V
V
GS
= 12V
I
D
= -2.3A
V
DS
= -10V
V
GS
= -10V
V
DD
= -10V
I
D
= -1.0A
R
G
= 6.0
R
D
= 10
V
(BR)DSS
V
(BR)DSS
/
T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
-3.0
–––
-2.0
-25
-100
100
25
–––
–––
40
40
90
50
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
Between lead,6mm(0.25in.)
from package and center
of die contact
V
GS
= 0V
V
DS
= -15V
= 1.0MHz
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
290
210
67
–––
–––
–––
pF
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.25A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.25A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
I
SM
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
69
90
-1.2
100
140
V
ns
nC
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
–––
-9.2
–––
–––
-2.0
A
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance
–––
6.0
–––
L
D
Internal Drain Inductance
–––
4.0
–––
nH
ns
nA
μA
R
DS(ON)
Static Drain-to-Source On-Resistance
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
I
SD
≤
-2.3A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
10sec.
S
D
G
S
D
G
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參數(shù)描述
IRF7104HR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 2.3A 8-Pin SOIC
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IRF7104TR 制造商:Int'L Rectifier 功能描述:Trans MOSFET P-CH 20V 2.3A 8-Pin SOIC T/R
IRF7104TRHR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 2.3A 8-Pin SOIC T/R
IRF7104TRPBF 功能描述:MOSFET MOSFT DUAL PCh -20V 2.3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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