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參數(shù)資料
| 型號： | IRF7104 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 158K |
| 代理商： | IRF7104 |
HEXFET
Power MOSFET
PD - 9.1096B
IRF7104
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Adavanced Process Technology
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Ultra Low On-Resistance
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Dual P-Channel MOSFET
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Surface Mount
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Available in Tape & Reel
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Dynamic dv/dt Rating
l
Fast Switching
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
SO-8
V
DSS
= -20V
R
DS(on)
= 0.250
I
D
= -2.3A
8/25/97
D1
D1
D2
D2
G 1
S2
G 2
S1
Top View
8
1
2
3
4
5
6
7
Parameter Min. Typ. Max. Units
R
θ
JA
Maximum Junction-to-Ambient
––– ––– 62.5 °C/W
Parameter
Max.
-2.3
-1.8
-10
2.0
0.016
± 12
-3.0
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
W/°C
V
V/nS
V
GS
dv/dt
T
J,
T
STG
-55 to + 150
Absolute Maximum Ratings
A
Thermal Resistance Ratings
W
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7104HR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 2.3A 8-Pin SOIC |
| IRF7104PBF | 功能描述:MOSFET DUAL -20V P-CH HEXFET 7.5mOhms 63nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7104TR | 制造商:Int'L Rectifier 功能描述:Trans MOSFET P-CH 20V 2.3A 8-Pin SOIC T/R |
| IRF7104TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 2.3A 8-Pin SOIC T/R |
| IRF7104TRPBF | 功能描述:MOSFET MOSFT DUAL PCh -20V 2.3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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