參數(shù)資料
型號(hào)： IRF7103QTR
廠商： International Rectifier
英文描述： TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 50V V(BR)DSS | 3A I(D) | SO
中文描述： 晶體管| MOSFET的|配對| N溝道| 50V五（巴西）直| 3A條（?。﹟蘇
文件頁數(shù)： 2/10頁
文件大?。?/td> 169K
代理商： IRF7103QTR
IRF7103Q
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 1.5A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 1.5A
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
35
45
1.2
53
67
V
ns
nC
Source-Drain Ratings and Characteristics
A
12
–––
–––
–––
3.0
–––
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
400μs; duty cycle
≤
2%.
Surface mounted on 1 in square Cu board
Starting T
J
= 25
°
C, L = 4.9mH
R
G
= 25
, I
AS
= 3.0A. (See Figure 12).
I
SD
≤
2.0A, di/dt
≤
155A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175
°
C
Limited by T
Jmax
, see Fig.16c, 16d, 19, 20 for typical repetitive
avalanche performance.
Parameter
Min. Typ. Max. Units
50
–––
–––
0.057
–––
–––
–––
–––
–––
1.0
–––
3.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
–––
1.2
–––
2.8
–––
5.1
–––
1.7
–––
15
–––
2.3
–––
255
–––
69
–––
29
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 3.0A
V
GS
= 4.5V, I
D
= 1.5A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 15V, I
D
= 3.0A
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 55
°
C
V
GS
= 20V
V
GS
= -20V
I
D
= 2.0A
V
DS
= 40V
V
GS
= 10V
V
DD
= 25V
I
D
= 1.0A
R
G
= 6.0
R
D
= 25
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V/
°
C
130
200
3.0
–––
2.0
25
100
-100
15
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
μA
m
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
S
D
G
相關(guān)PDF資料
PDF描述
IRF7103 Power MOSFET(Vdss=50V, Rds(on)=0.130ohm, Id=3.0A)
IRF7104 HEXFET Power MOSFET
IRF7106 Power MOSFET(Vdss=+-20V)
IRF710SPBF HEXFET㈢ Power MOSFET
IRF7207PBF HEXFET㈢ Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7103QTRPBF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7103TR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 50V 3A 8-Pin SOIC T/R 制造商:Int'L Rectifier 功能描述:Trans MOSFET N-CH 50V 3A 8-Pin SOIC T/R
IRF7103TRPBF 功能描述:MOSFET MOSFT DUAL NCh 50V 3.0A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7103TRPBF-CUT TAPE 制造商:IR 功能描述:Dual N-Channel 50 V 2 W 12 nC Hexfet Power Mosfet Surface Mount - SOIC-8
IRF7104 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*