參數(shù)資料
型號： IRF6631
廠商： International Rectifier
英文描述： DirectFET Power MOSFET
中文描述： DirectFET功率MOSFET
文件頁數(shù)： 2/9頁
文件大?。?/td> 248K
代理商： IRF6631
2
www.irf.com
Pulse width
≤
400μs; duty cycle
≤
2%.
Repetitive rating; pulse width limited by max. junction temperature.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
Β
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
Min. Typ. Max. Units
30
–––
–––
23
–––
6.0
–––
8.3
1.35
1.8
–––
-5.2
–––
–––
–––
–––
–––
–––
–––
–––
32
–––
–––
12
–––
3.4
–––
1.1
–––
4.4
–––
3.1
–––
5.5
–––
7.3
–––
1.6
–––
15
–––
18
–––
18
–––
4.9
–––
1450
–––
310
–––
170
–––
–––
7.8
10.8
2.35
–––
1.0
150
100
-100
–––
18
–––
–––
–––
–––
–––
–––
3.0
–––
–––
–––
–––
–––
–––
–––
V
mV/°C
m
V
GS(th)
V
GS(th)
/
T
J
I
DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
V
mV/°C
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
nA
gfs
Q
g
S
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
See Fig. 15
nC
ns
pF
Min. Typ. Max. Units
–––
–––
42
A
–––
–––
100
–––
–––
–––
–––
11
10
1.2
17
15
V
ns
nC
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Clamped Inductive Load
See Fig. 16 & 17
V
GS
= 0V
V
DS
= 15V
V
DS
= 15V, I
D
= 10A
Conditions
= 1.0MHz
V
DS
= 16V, V
GS
= 0V
V
GS
= 20V
V
GS
= -20V
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
DS
= 15V
V
GS
= 4.5V
I
D
= 10A
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 13A
V
GS
= 4.5V, I
D
= 10A
V
DS
= V
GS
, I
D
= 25μA
T
J
= 25°C, I
F
= 10A
di/dt = 500A/μs
I
D
= 10A
V
DD
= 16V, V
GS
= 4.5V
See Fig. 18
T
J
= 25°C, I
S
= 10A, V
GS
= 0V
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