- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377505 > IRF640NL (International Rectifier) RES 5.62-OHM 1% 0.125W 100PPM THICK-FILM SMD-0805 5K/REEL-7IN-PA PDF資料下載
參數(shù)資料
| 型號(hào)： | IRF640NL |
| 廠商： | International Rectifier |
| 英文描述： | RES 5.62-OHM 1% 0.125W 100PPM THICK-FILM SMD-0805 5K/REEL-7IN-PA |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 200V的電壓，的Rds（on）\u003d 0.15ohm，身份證\u003d 18A條） |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 155K |
| 代理商： | IRF640NL |
HEXFET
Power MOSFET
10/09/00
Parameter
Max.
18
13
72
150
1.0
± 20
247
18
15
8.1
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to +175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Description
Fifth Generation HEXFET
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
V
DSS
= 200V
R
DS(on)
= 0.15
I
D
= 18A
S
D
G
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Ease of Paralleling
l
Simple Drive Requirements
D
2
Pak
IRF640NS
TO-220AB
IRF640N
TO-262
IRF640NL
IRF640N
IRF640NS
IRF640NL
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF640NL) is available for low-
profile application.
www.irf.com
1
PD - 94006
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF640NS | Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A) |
| IRF6610 | HEXFET Power MOSFET Silicon Technology with the advanced DirectFETTM |
| IRF6618TR1 | Power MOSFET |
| IRF6618 | HEXFET Power MOSFET |
| IRF6621 | The IRF6621 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF640NLHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-262 |
| IRF640NLPBF | 功能描述:MOSFET MOSFT 200V 18A 150mOhm 44.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF640NPBF | 功能描述:MOSFET MOSFT 200V 18A 150mOhm 44.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF640NS | 制造商:International Rectifier 功能描述:MOSFET N D2-PAK |
| IRF640NSHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 18A 3PIN D2PAK - Rail/Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。