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參數(shù)資料
| 型號(hào)： | IRF640L |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 200V的電壓，的Rds（on）\u003d 0.18ohm，身份證\u003d 18A條） |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大小： | 228K |
| 代理商： | IRF640L |
IRF640S/L
2
www.irf.com
Parameter
Min. Typ. Max. Units
200
–––
–––
0.29
–––
–––
2.0
–––
6.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
–––
51
–––
45
–––
36
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 11A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 11A
V
DS
= 200V, V
GS
= 0V
V
DS
= 160V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 18A
V
DS
=160V
V
GS
= 10V, See Fig. 6 and 13
V
DD
=100V
I
D
= 18A
R
G
= 9.1
R
D
= 5.4
,
See Fig. 10
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
0.18
4.0
–––
25
250
100
-100
70
13
39
–––
–––
–––
–––
V
V/°C
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1300 –––
430
130
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
nH
7.5
L
S
Internal Source Inductance
V
DD
= 50V, starting T
J
= 25°C, L = 2.7mH
R
G
= 25
, I
AS
= 18A. (See Figure 12)
I
SD
≤
18A, di/dt
≤
150A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Pulse width
≤
300μs; duty cycle
≤
2%.
Uses IRF640 data and test conditions
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 18A, V
GS
= 0V
T
J
= 25°C, I
F
= 18A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
300
3.4
2.0
610
7.1
V
ns
μC
Source-Drain Ratings and Characteristics
S
D
G
A
18
72
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