參數(shù)資料
型號(hào)： IRF640L
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 200V的電壓，的Rds（on）\u003d 0.18ohm，身份證\u003d 18A條）
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 228K
代理商： IRF640L
IRF640S/L
HEXFET
Power MOSFET
PD -90902B
S
D
G
Description
7/20/99
Parameter
Typ.
–––
–––
Max.
1.0
40
Units
R
θ
JC
R
θ
JA
www.irf.com
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Thermal Resistance
°C/W
Parameter
Max.
18
11
72
3.1
130
1.0
± 20
580
18
13
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
Absolute Maximum Ratings
l
Surface Mount (IRF640S)
l
Low-profile through-hole (IRF640L)
l
Available in Tape & Reel (IRF640S)
l
Dynamic dv/dt Rating
l
150°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
D2
TO-262
V
DSS
= 200V
R
DS(on)
= 0.18
I
D
= 18A
Third Generation HEXFETs from International Rectifier provide
the designer with the best combinations of fast switching ,
ruggedized device design, low on-resistance and cost-
effectiveness.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D
2
Pak is suitable for high
current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.The through-hole version (IRF640L) is
available for low-profile applications.
1
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