參數(shù)資料
型號(hào): IR22141
廠商: International Rectifier
英文描述: HALF-BRIDGE GATE DRIVER IC
中文描述: 半橋柵極驅(qū)動(dòng)IC
文件頁(yè)數(shù): 25/28頁(yè)
文件大?。?/td> 308K
代理商: IR22141
25
IR2214/IR22141(SS)
www.irf.com
ADVANCE DATA
OFF
HS Turning ON
ON
dV/dt
R
Goff
C
RESoff
R
DRn
Translated into equations::
(
R
V
Goff
th
Rearranging the equation yields:
When R
Goff
> 4 Ohm,
R
is well defined by
Vcc/I
(I
from IR2214 datasheet).
As an example, table 3 reports R
for two popu-
lar IGBT to withstand
dV
out
/dt = 5V/ns
.
NOTICE:
the above-described equations are in-
tended being an approximated way for the gate
resistances sizing. More accurate sizing may
account more precise device modelling and para-
sitic component dependent on the PCB and
power section layout and related connections.
)
(
)
dV
R
R
I
R
DRn
Goff
DRn
+
=
+
dt
C
out
RESoff
DRn
RESoff
th
Goff
R
dt
dV
C
V
R
Sizing the turn-off gate resistor
The worst case in sizing the turn-off resistor R
is when the collector of the IGBT in off state is
forced to commutate by external events (i.e. the
turn-on of the companion IGBT).
In this case the dV/dt of the output node induces
a parasitic current through C
RESoff
flowing in R
Goff
and R
(see figure 22).
If the voltage drop at the gate exceeds the thresh-
old voltage of the IGBT, the device may self turn
on causing large oscillation and relevant cross
conduction.
Figure 22:
R
sizing: current path when Low
Side is off and High Side turns on
IGBT
Qge
Qgc
Vge*
tsw
Iavg
Rtot
24
40
RGon
std commercial value
RTOT - RDRp = 12.7
10
RTOT - RDRp = 32.5
33
Tsw
420ns
202ns
IRGP30B120K(D)
IRG4PH30K(D)
19nC
10nC
82nC
20nC
9V
9V
400ns
200ns
0.25A
0.15A
Table 2: dV
OUT
/dt driven R
Gon
sizing
IGBT
Qge
Qgc
Vge*
CRESoff
Rtot
RGon
std commercial value
RTOT - RDRp = 6.5
8.2
RTOT - RDRp = 78
82
dVout/dt
IRGP30B120K(D)
IRG4PH30K(D)
19nC
10nc
82nC
20nC
9V
9V
85pF
14pF
14
85
4.5V/ns
5V/ns
Table 3: R
Goff
sizing
IGBT
Vth(min)
CRESoff
RGoff
IRGP30B120K(D)
IRG4PH30K(D)
4
3
85pF
14pF
RGoff 4
RGoff 35
Table 1: t
sw
driven R
Gon
sizing
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