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參數(shù)資料
| 型號(hào)： | IR22141 |
| 廠商： | International Rectifier |
| 英文描述： | HALF-BRIDGE GATE DRIVER IC |
| 中文描述： | 半橋柵極驅(qū)動(dòng)IC |
| 文件頁(yè)數(shù)： | 23/28頁(yè) |
| 文件大?。?/td> | 308K |
| 代理商： | IR22141 |
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23
IR2214/IR22141(SS)
www.irf.com
ADVANCE DATA
b.
A resistor (R
) is placed in series with boot-
strap diode (see figure 19) so to limit the current
when the bootstrap capacitor is initially charged.
We suggest not exceeding some Ohms (typi-
cally 5, maximum 10 Ohm) to avoid increasing
the V
time-constant. The minimum on time for
charging the bootstrap capacitor or for refresh-
ing its charge must be verified against this time-
constant.
Bootstrap Resistor
c.
For high
T
designs where is used an electro-
lytic tank capacitor, its ESR must be consid-
ered. This parasitic resistance forms a voltage
divider with R
generating a voltage step on V
at the first charge of bootstrap capacitor. The
voltage step and the related speed (dV
/dt)
should be limited. As a general rule, ESR should
meet the following constraint:
Bootstrap Capacitor
Parallel combination of small ceramic and large
electrolytic capacitors is normally the best com-
promise, the first acting as fast charge thank for
the gate charge only and limiting the dV
/dt by
reducing the equivalent resistance while the sec-
ond keeps the V
BS
voltage drop inside the de-
sired
V
BS
.
d.
The diode must have a BV> 1200V and a fast
recovery time (trr < 100 ns) to minimize the
amount of charge fed back from the bootstrap
capacitor to V
CC
supply
Bootstrap Diode
V
V
R
ESR
ESR
+
CC
BOOT
3
≤
Gate resistances
The switching speed of the output transistor can
be controlled by properly size the resistors con-
trolling the turn-on and turn-off gate current. The
following section provides some basic rules for
sizing the resistors to obtain the desired switch-
ing time and speed by introducing the equivalent
output resistance of the gate driver (
R
DRp
and
R
).
The examples always use IGBT power transis-
tor. Figure 20 shows the nomenclature used in
the following paragraphs. In addition, V
cates the plateau voltage,
Q
and
Q
indicate
the gate to collector and gate to emitter charge
respectively.
*
indi-
Figure 20:
Nomenclature
V
ge
*
10%
t
1
,Q
GE
C
RESoff
C
RESon
V
CE
I
C
V
GE
C
RES
10%
90%
C
RES
t
Don
V
GE
dV/dt
I
C
t
2
,Q
GC
t,Q
t
R
t
SW
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| IR22141SS | 功能描述:IC DRIVER HALF BRIDGE SGL 24SSOP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| IR22141SSPBF | 功能描述:功率驅(qū)動(dòng)器IC 200V HALF BRDG DRVR IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IR22141SSPBF | 制造商:International Rectifier 功能描述:Driver IC |
| IR22141SSTRPBF | 功能描述:功率驅(qū)動(dòng)器IC Hlf Brdg Drvr IC for Pwr Swtch App RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IR2214SS | 功能描述:IC DRIVER HALF BRIDGE SGL 24SSOP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
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