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參數(shù)資料
| 型號： | IR22141 |
| 廠商： | International Rectifier |
| 英文描述： | HALF-BRIDGE GATE DRIVER IC |
| 中文描述： | 半橋柵極驅(qū)動IC |
| 文件頁數(shù)： | 24/28頁 |
| 文件大?。?/td> | 308K |
| 代理商： | IR22141 |
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IR2214/IR22141(SS)
www.irf.com
ADVANCE DATA
≤
>
+
=
+
+
+
1
1
1
1
2
1
1
1
on
t
SW
t
o
on
t
SW
t
on
t
SW
t
o
o
SW
t
on
t
DRp
R
when
I
Vcc
when
I
Vcc
I
Vcc
When R
Gon
> 7 Ohm,
R
DRp
is defined by
(I
O1+
,I
O2+
and t
on1
from the IR2214 datasheet).
RESoff
avg
out
C
I
dt
dV
=
Table 1 reports the gate resistance size for two
commonly used IGBTs (calculation made using
typical datasheet values and assuming
Vcc=15V).
Output voltage slope
Turn-on gate resistor R
Gon
can be sized to con-
trol output slope
(dV
.
While the output voltage has a non-linear
behaviour, the maximum output slope can be ap-
proximated by:
inserting the expression yielding Iavg and
rearranging:
As an example, table 2 shows the sizing of gate
resistance to get
dV
/dt=5V/ns
when using two
popular IGBTs, typical datasheet values and
assuming
Vcc=15V
.
NOTICE
: Turn on time must be lower than T
to
avoid improper desaturation detection and SSD
triggering.
dt
dV
C
V
Vcc
R
out
RESoff
ge
TOT
=
*
Sizing the turn-on gate resistor
Switching-time
For the matters of the calculation included here-
after, the switching time t
is defined as the time
spent to reach the end of the plateau voltage (a
total
Q
+
Q
has been provided to the IGBT gate).
To obtain the desired switching time the gate
resistance can be sized starting from
Q
ge
and
Q
gc
,
Vcc
,
V
ge
Q
I
=
*
(see figure 21):
and
Figure 21:
R
Gon
sizing
sw
ge
gc
avg
t
Q
+
Vcc/Vb
R
DRp
R
Gon
C
RES
COM/Vs
I
avg
where
R
Gon
= gate on-resistor
R
DRp
= driver equivalent on-resistance
Gon
DRp
TOT
R
R
R
+
=
avg
ge
TOT
I
V
Vcc
R
*
=
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| IR22141SSTRPBF | 功能描述:功率驅(qū)動器IC Hlf Brdg Drvr IC for Pwr Swtch App RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IR2214SS | 功能描述:IC DRIVER HALF BRIDGE SGL 24SSOP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
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