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參數(shù)資料
| 型號(hào)： | IR22141 |
| 廠商： | International Rectifier |
| 英文描述： | HALF-BRIDGE GATE DRIVER IC |
| 中文描述： | 半橋柵極驅(qū)動(dòng)IC |
| 文件頁(yè)數(shù)： | 18/28頁(yè) |
| 文件大?。?/td> | 308K |
| 代理商： | IR22141 |
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18
IR2214/IR22141(SS)
www.irf.com
ADVANCE DATA
2.
Undervoltage on V
: the FAULT\SD pin
is forced low and held until the
undervoltage is active (
not latched
).
FAULT/SD is externally driven low either
from the controller or from another
IR2214 device. This event is
not latched
;
therefore the FLT_CLR cannot disable
it. Only when FAULT/SD becomes high
the device returns in normal operating
mode.
3.
5. Active bias
For the purpose of sensing the power transistor
desaturation the collector voltage is read by an
external HV diode. The diode is normally biased
by an internal pull up resistor connected to the
local supply line (V
or V
). When the transistor
is “on” the diode is conducting and the amount
of current flowing in the circuit is determined by
the internal pull up resistor value.
In the high side circuit, the desaturation biasing
current may become relevant for dimensioning
the bootstrap capacitor (see figure 19). In fact,
too low pull up resistor value may result in high
current discharging significantly the bootstrap
capacitor. For that reason typical pull up resistor
are in the range of 100 k
. This is the value of
the internal pull up.
While the impedance of DSH/DSL pins is very
low when the transistor is on (low impedance
path through the external diode down to the power
transistor), the impedance is only controlled by
the pull up resistor when the transistor is off. In
that case relevant dV/dt applied by the power
transistor during the commutation at the output
results in a considerable current injected through
the stray capacitance of the diode into the
desaturation detection pin (DSH/L). This coupled
noise may be easily reduced using an active bias
for the sensing diode.
An Active Bias structure is available only for
IR22141 version for DSH/L pin. The DSH/L pins
present an active pull-up respectively to VB/VCC,
and a pull-down respectively to VS/COM.
The dedicated biasing circuit reduces the
impedance on the DSH/L pin
when the voltage
exceeds the V
threshold (see figure 16). This
low impedance helps in rejecting the noise
providing the current inject by the parasitic
capacitance. When the power transistor is fully
on, the sensing diode gets forward biased and
the voltage at the DSH/L pin decreases. At this
point the biasing circuit deactivates, in order to
reduce the bias current of the diode as shown in
figure 16.
Figure 16:
R
DSH/L
Active Biasing
6. Output stage
The structure is shown in figure 13 and consists
of two turns on stages and one turn off stage.
When the driver turns on the IGBT (see figure 8),
a first stage is constantly activated while an
additional stage is maintained active only for a
limited time (ton1). This feature boost the total
driving capability in order to accommodate both
fast gate charge to the plateau voltage and dV/dt
control in switching.
V
DSH/L
V
D
V
D
100 ohm
100K ohm
R
DSH/L
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| IR22141SS | 功能描述:IC DRIVER HALF BRIDGE SGL 24SSOP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| IR22141SSPBF | 功能描述:功率驅(qū)動(dòng)器IC 200V HALF BRDG DRVR IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IR22141SSPBF | 制造商:International Rectifier 功能描述:Driver IC |
| IR22141SSTRPBF | 功能描述:功率驅(qū)動(dòng)器IC Hlf Brdg Drvr IC for Pwr Swtch App RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IR2214SS | 功能描述:IC DRIVER HALF BRIDGE SGL 24SSOP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
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