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參數(shù)資料
| 型號： | IR22141 |
| 廠商： | International Rectifier |
| 英文描述： | HALF-BRIDGE GATE DRIVER IC |
| 中文描述： | 半橋柵極驅動IC |
| 文件頁數(shù)： | 16/28頁 |
| 文件大小： | 308K |
| 代理商： | IR22141 |
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16
IR2214/IR22141(SS)
www.irf.com
ADVANCE DATA
FLTCLR
Q
Q
SET
CLR
S
R
FAULT/SD
(external hard
shutdown)
SY_FLT
(external
hold)
internal
HOLD
internal FAULT
(hard shutdown)
UVCC
DesatHS
DesatLS
Figure 14
: fault management diagram
The external sensing diode should have
BV>1200V and low stray capacitance (in order
to minimize noise coupling and switching de-
lays). The diode is biased by an internal pull-up
resistor R
(equal to V
/I
or V
/I
for
IR2214) or by a dedicated circuit (see the active-
bias section for the IR22141). When V
in-
creases, the voltage at DSH/L pin increases too.
Being internally biased to the local supply,
DSH/L voltage is automatically clamped. When
DSH/L exceeds the V
threshold the com-
parator triggers (see figure 13). Comparator
output is filtered in order to avoid false
desaturation detection by externally induced
noise; pulses shorter than t
are filtered out. To
avoid detecting a false desaturation during IGBT
turn on, the desaturation circuit is disabled by a
Blanking signal (T
, see Blanking block in fig-
ure 13). This time is the estimated maximum
IGBT turn on time and must be not exceeded by
proper gate resistance sizing. When the IGBT is
not completely saturated after T
, desaturation
is detected and the driver will turn off.
Eligible desaturation signals initiate the Soft
Shutdown sequence (SSD). While in SSD, the
output driver goes in high impedance and the
SSD pull-down is activated to turn off the IGBT
through SSDH/L pin. The SY_FLT output pin
(active low, see figure 14) reports the IR2214
status all the way long SSD sequence lasts (t
).
Once finished SSD, SYS_FLT releases, and
IR2214 generates a FAULT signal (see the
FAULT/SD section) by activating FAULT/SD pin.
This generates a hard shut down for both high
and low output stages (HO=LO=low). Each driver
is latched low until the fault is cleared (see
FLT_CLR).
Figure 14 shows the fault management circuit.
In this diagram DesatHS and DesatLS are two
internal signals that come from the output stages
(see figure 13).
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相關代理商/技術參數(shù) |
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|---|---|
| IR22141SS | 功能描述:IC DRIVER HALF BRIDGE SGL 24SSOP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| IR22141SSPBF | 功能描述:功率驅動器IC 200V HALF BRDG DRVR IC RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IR22141SSPBF | 制造商:International Rectifier 功能描述:Driver IC |
| IR22141SSTRPBF | 功能描述:功率驅動器IC Hlf Brdg Drvr IC for Pwr Swtch App RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IR2214SS | 功能描述:IC DRIVER HALF BRIDGE SGL 24SSOP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
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