參數(shù)資料
型號(hào)： IKB06N60T
廠商： Electronic Theatre Controls, Inc.
英文描述： Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 低損耗DuoPack：在IGBT的溝槽場(chǎng)終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁(yè)數(shù)： 8/14頁(yè)
文件大小： 371K
代理商： IKB06N60T
IKB06N60T
IKP06N60T
^
TrenchStop series
Power Semiconductors
8
Rev. 2 Oct-04
E
,
S
0A
2A
4A
6A
8A
10A
0,0 mJ
0,1 mJ
0,2 mJ
0,3 mJ
0,4 mJ
0,5 mJ
0,6 mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
E
,
S
10
30
55
80
0,0 mJ
0,1 mJ
0,2 mJ
0,3 mJ
0,4 mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
=175°C,
V
CE
=400V, V
GE
=0/15V,
R
G
=23
,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
=175°C,
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 6A,
Dynamic test circuit in Figure E)
E
,
S
50°C
100°C
150°C
0,0mJ
0,1mJ
0,2mJ
0,3mJ
0,4mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
E
,
S
200V
300V
400V
500V
0,0mJ
0,1mJ
0,2mJ
0,3mJ
0,4mJ
0,5mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
T
J
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load,
V
CE
=400V,
V
GE
= 0/15V,
I
C
= 6A,
R
G
= 23
,
Dynamic test circuit in Figure E)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load,
T
J
= 175°C,
V
GE
= 0/15V,
I
C
= 6A,
R
G
= 23
,
Dynamic test circuit in Figure E)
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參數(shù)描述
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IKB10N60T 功能描述:IGBT 晶體管 LOW LOSS DuoPack 600V 10A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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IKB15N60T 功能描述:IGBT 晶體管 LOW LOSS DuoPack 600V 15A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKB15N60TATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 30A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 30A 130W TO263-3
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