參數(shù)資料
型號： IKW20N60T
廠商： INFINEON TECHNOLOGIES AG
英文描述： IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
中文描述： 在IGBT的溝槽場終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù)： 1/15頁
文件大?。?/td> 435K
代理商： IKW20N60T
Low Loss DuoPack : IGBT in Trench and Fieldstop
technology
with soft, fast recovery anti-parallel EmCon HE diode
Very low V
CE(sat)
1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5
μ
s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low V
CE(sat)
Positive temperature coefficient in V
CE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
V
CE
I
C
V
CE(sat
),Tj=25°C
IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
Power Semiconductors
1
Rev. 2.2 Dec-04
T
j,max
Marking Code
Package
Ordering Code
IKP20N60T
600V
20A
1.5V
175
°
C
K20T60
TO-220
Q67040S4715
IKB20N60T
600V
20A
1.5V
175
°
C
K20T60
TO-263
Q67040S4713
IKW20N60T
600V
20A
1.5V
175
°
C
K20T60
TO-247
Q67040S4716
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current, limited by
T
jmax
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area (
V
CE
≤
600V,
T
j
≤
175
°
C)
Diode forward current, limited by
T
jmax
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
400V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V
CE
I
C
600
40
20
V
A
I
Cpuls
-
60
60
I
F
40
20
I
Fpuls
V
GE
t
SC
60
±
20
5
V
μ
s
P
tot
T
j
T
stg
-
166
W
-40...+175
-55...+175
260
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
P-TO-247-3-1
(TO-220AC)
P-TO-263-3-2 (D2-PAK)
(TO-263AB)
P-TO-220-3-1
(TO-220AB)
相關(guān)PDF資料
PDF描述
IKP03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
IKB03N120H2 Tantalum Molded Capacitor; Capacitance: .47uF; Voltage: 35V; Case Size: 3.2x1.6 mm; Packaging: Tape & Reel
IKW25T120 TRENCHSTOP SERIES
IKW40T120 LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARAALEL EMCON HE DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IKW20N60T E8161 功能描述:IGBT 晶體管 LOW LOSS DuoPack 600V 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKW20N60TA 功能描述:IGBT 600V 40A 166W TO247-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:TrenchStop™ 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
IKW20N60TAFKSA1 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 40A 166W TO247-3
IKW20N60TFKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 40A 166W TO247-3
IKW25N120H3 功能描述:IGBT 晶體管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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