參數(shù)資料
型號(hào)： IKB06N60T
廠商： Electronic Theatre Controls, Inc.
英文描述： Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 低損耗DuoPack：在IGBT的溝槽場(chǎng)終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁(yè)數(shù)： 7/14頁(yè)
文件大?。?/td> 371K
代理商： IKB06N60T
IKB06N60T
IKP06N60T
^
TrenchStop series
Power Semiconductors
7
Rev. 2 Oct-04
t
S
0A
3A
6A
9A
12A
15A
1ns
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
t
S
10
30
50
70
90
1ns
10ns
100ns
t
f
t
r
t
d(off)
t
d(on)
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
J
=175°C,
V
CE
= 400V, V
GE
= 0/15V,
R
G
= 23
,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
J
=175°C,
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 6A,
Dynamic test circuit in Figure E)
t
S
50°C
100°C
150°C
1ns
10ns
100ns
t
r
t
f
t
d(on)
t
d(off)
V
G
)
,
G
-
E
-50°C
0°C
50°C
100°C
150°C
0V
1V
2V
3V
4V
5V
6V
min.
typ.
max.
T
J
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/15V,
I
C
= 6A,
R
G
= 23
,
Dynamic test circuit in Figure E)
T
J
,
JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(
I
C
= 0.18mA)
相關(guān)PDF資料
PDF描述
IKB20N60T IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
IKP20N60T IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
IKW20N60T IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
IKP03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IKB06N60TATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 12A 88W TO263-3
IKB10N60T 功能描述:IGBT 晶體管 LOW LOSS DuoPack 600V 10A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKB10N60TATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 20A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 20A 110W TO263-3
IKB15N60T 功能描述:IGBT 晶體管 LOW LOSS DuoPack 600V 15A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKB15N60TATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 30A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 30A 130W TO263-3
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*