參數(shù)資料
型號(hào)： IKB06N60T
廠商： Electronic Theatre Controls, Inc.
英文描述： Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 低損耗DuoPack：在IGBT的溝槽場(chǎng)終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁(yè)數(shù)： 11/14頁(yè)
文件大?。?/td> 371K
代理商： IKB06N60T
IKB06N60T
IKP06N60T
^
TrenchStop series
Power Semiconductors
11
Rev. 2 Oct-04
I
r
,
R
200A/μs
400A/μs
600A/μs
800A/μs
0A
2A
4A
6A
8A
T
J
=25°C
T
J
=175°C
d
r
/
,
D
O
200A/μs
400A/μs
600A/μs
800A/μs
0A/μs
-100A/μs
-200A/μs
-300A/μs
-400A/μs
-500A/μs
T
J
=25°C
T
J
=175°C
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(
V
R
= 400V,
I
F
= 6A,
Dynamic test circuit in Figure E)
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(
V
R
= 400V,
I
F
= 6A,
Dynamic test circuit in Figure E)
I
F
,
F
0V
1V
2V
0A
2A
4A
6A
8A
10A
25°C
T
J
=175°C
V
F
,
F
0°C
50°C
100°C
150°C
0,0V
0,5V
1,0V
1,5V
2,0V
6A
I
F
=12A
3A
V
F
,
FORWARD VOLTAGE
T
J
,
JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage as a
function of junction temperature
Figure 27. Typical diode forward current as
a function of forward voltage
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IKB06N60TATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 12A 88W TO263-3
IKB10N60T 功能描述:IGBT 晶體管 LOW LOSS DuoPack 600V 10A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKB10N60TATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 20A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 20A 110W TO263-3
IKB15N60T 功能描述:IGBT 晶體管 LOW LOSS DuoPack 600V 15A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKB15N60TATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 30A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 30A 130W TO263-3
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