參數(shù)資料
型號(hào)： IKB06N60T
廠商： Electronic Theatre Controls, Inc.
英文描述： Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 低損耗DuoPack：在IGBT的溝槽場(chǎng)終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù)： 3/14頁
文件大?。?/td> 371K
代理商： IKB06N60T
IKB06N60T
IKP06N60T
^
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
TrenchStop series
Power Semiconductors
3
Rev. 2 Oct-04
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
368
28
11
42
-
-
-
-
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=480V,
I
C
=6A
V
GE
=15V
TO-220-3-1
TO-263-3-2
V
GE
=15V,
t
SC
≤
5
μ
s
V
CC
= 400V,
T
j
= 25
°
C
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
L
E
-
7
-
nH
I
C(SC)
-
55
-
A
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
9
6
-
-
-
-
-
-
-
130
58
0.09
0.11
0.2
ns
T
j
=25
°
C,
V
CC
=400V,
I
C
=6A,
V
GE
=0/15V,
R
G
=23
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
=60nH,
2)
=40pF
mJ
t
rr
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
123
190
5.3
450
-
-
-
-
ns
nC
A
A/
μ
s
T
j
=25
°
C,
V
R
=400V,
I
F
=6A,
di
F
/dt
=550A/
μ
s
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IKB06N60TATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 12A 88W TO263-3
IKB10N60T 功能描述:IGBT 晶體管 LOW LOSS DuoPack 600V 10A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKB10N60TATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 20A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 20A 110W TO263-3
IKB15N60T 功能描述:IGBT 晶體管 LOW LOSS DuoPack 600V 15A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKB15N60TATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 30A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 30A 130W TO263-3
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