參數(shù)資料
型號(hào)： IDT70V7519S166DR
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： DRAM
英文描述： HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
中文描述： 256K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
封裝： PLASTIC, QFP-208
文件頁數(shù)： 22/22頁
文件大?。?/td> 490K
代理商： IDT70V7519S166DR
6.42
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
9
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range(5) (VDD = 3.3V ± 150mV)
NOTES:
1. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCYC, using "AC TEST CONDITIONS" at input
levels of GND to 3V.
2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby.
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
4. VDD = 3.3V, TA = 25°C for Typ, and are not production tested. IDD DC(f=0) = 120mA (Typ).
5.
CEX = VIL means CE0X = VIL and CE1X = VIH
CEX = VIH means CE0X = VIH or CE1X = VIL
CEX < 0.2V means CE0X < 0.2V and CE1X > VCC - 0.2V
CEX > VCC - 0.2V means CE0X > VCC - 0.2V or CE1X < 0.2V
"X" represents "L" for left port or "R" for right port.
70V 7519S200 (7)
Com 'l O nly
70V 7519S166 (6)
Com 'l
& Ind
70V 7519S133
Com 'l
& Ind
Sym bol
Param eter
Test Condition
Version
Typ.(4)
Max.
Typ.(4)
Max.
Typ.(4)
Max.
Unit
IDD
Dy nam ic O p e rating
C urre nt (B o th
Po rts Ac tiv e )
CEL and CER= V IL,
O utp uts Disab le d ,
f = fMAX (1)
COM 'L
S
815
950
675
790
550
645
mA
IND
S
____
675
830
550
675
ISB1
S tand by C urrent
(B o th P o rts - TTL
Le v e l Inp uts )
CEL = CER = VIH
f = fMAX
(1 )
COM 'L
S
340
410
275
340
250
295
mA
IND
S
____
275
355
250
310
ISB2
S tand by C urrent
(One P o rt - TTL
Le v e l Inp uts )
CE"A " = VIL and CE"B " = V IH(3)
A c tiv e P o rt Outp uts D isab le d ,
f= fMAX (1)
COM 'L
S
690
770
515
640
460
520
mA
IND
S
____
515
660
460
545
ISB3
F ull S tand by C urrent
(B o th P o rts - C M O S
Le v e l Inp uts )
Bo th P o rts
CEL and
CER > VDD - 0.2V, VIN > V DD - 0.2V
or V IN < 0.2 V, f = 0
(2 )
COM 'L
S
10
30
10
30
10
30
mA
IND
S
____
10
40
10
40
ISB4
F ull S tand by C urrent
(One P o rt - CM OS
Le v e l Inp uts )
CE"A " < 0.2V and CE"B " > VDD - 0.2V(3)
V IN > V DD - 0.2V o r V IN < 0.2V
A c tiv e P o rt, O utp uts D isab le d , f = fMAX (1)
COM 'L
S
690
770
515
640
460
520
mA
IND
S
____
515
660
460
545
5618 tb l 0 9
6.
166MHz Industrial Temperature not available in BF-208 package.
7. This speed grade available when VDDQ = 3.3.V for a specific port (i.e., OPTx = VIH). This speed grade available in BC-256 package only.
相關(guān)PDF資料
PDF描述
IDT70V7519S166DRI HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
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IDT70V7519S200DRI HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
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IDT70V7519S166DRI 功能描述:IC SRAM 9MBIT 166MHZ 208QFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
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IDT70V7519S200BC8 功能描述:IC SRAM 9MBIT 200MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7519S200BCG 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 9MBIT 200MHZ 256CABGA
IDT70V7519S200BCG8 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 9MBIT 200MHZ 256CABGA
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