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參數(shù)資料
| 型號(hào)： | IDT70V7519S166DR |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| 中文描述： | 256K X 36 DUAL-PORT SRAM, 12 ns, PQFP208 |
| 封裝： | PLASTIC, QFP-208 |
| 文件頁數(shù)： | 14/22頁 |
| 文件大?。?/td> | 490K |
| 代理商： | IDT70V7519S166DR |
6.42
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
21
Identification Register Definitions
Instruction Field
Value
Description
Revision Number (31:28)
0x0
Reserved for version number
IDT Device ID (27:12)
0x300
Defines IDT part number
IDT JEDEC ID (11:1)
0x33
Allows unique identification of device vendor as IDT
ID Register Indicator Bit (Bit 0)
1
Indicates the presence of an ID register
5618 tbl 13
Scan Register Sizes
Register Name
Bit Size
Instruction (IR)
4
Bypass (BYR)
1
Identification (IDR)
32
Boundary Scan (BSR)
Note (3)
5618 tbl 14
System Interface Parameters
Instruction
Code
Description
EXTEST
0000
Forces contents of the bound ary scan cells onto the device outputs
(1).
Places the boundary scan registe r (BSR) between TDI and TDO.
BYPASS
1111
Places the bypass registe r (BYR) between TDI and TDO.
IDCODE
0010
Loads the ID register (IDR) with the vendor ID code and places the
register between TDI and TDO.
HIGHZ
0100
Places the bypass register (BYR) between TDI and TDO. Forces all
device output drivers to a High-Z state.
CLAMP
0011
Uses BYR. Forces contents of the bound ary scan cells onto the device
outputs. Places the bypass registe r (BYR) between TDI and TDO.
SAMPLE/PRELOAD
0001
Places the boundary scan registe r (BSR) between TDI and TDO.
SAMPLE allows data from device inputs
(2) and outputs(1) to be captured
in the boundary scan cells and shifted serially through TDO. PRELOAD
allows data to be input serially into the b oundary scan cells via the TDI.
RESERVED
All other codes
Several combinations are reserved. Do not use codes other than those
identified above.
5618 tbl 15
NOTES:
1. Device outputs = All device outputs except TDO.
2. Device inputs = All device inputs except TDI, TMS, TRST, and TCK.
3. The Boundary Scan Descriptive Language (BSDL) file for this device is available on the IDT website (www.idt.com), or by contacting your local
IDT sales representative.
相關(guān)PDF資料 |
PDF描述 |
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| IDT70V7519S166DRI | HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| IDT70V7519S166DRI | 功能描述:IC SRAM 9MBIT 166MHZ 208QFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7519S200BC | 功能描述:IC SRAM 9MBIT 200MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7519S200BC8 | 功能描述:IC SRAM 9MBIT 200MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7519S200BCG | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 9MBIT 200MHZ 256CABGA |
| IDT70V7519S200BCG8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 9MBIT 200MHZ 256CABGA |
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