- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄353778 > IDT70V7519S166BF (INTEGRATED DEVICE TECHNOLOGY INC) HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PDF資料下載
參數(shù)資料
| 型號(hào)： | IDT70V7519S166BF |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| 中文描述： | 256K X 36 DUAL-PORT SRAM, 12 ns, PBGA208 |
| 封裝： | FBGA-208 |
| 文件頁數(shù)： | 6/22頁 |
| 文件大?。?/td> | 490K |
| 代理商： | IDT70V7519S166BF |
6.42
14
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
CLK"A"
R/
W"A"
BANK ADDRESS
AND ADDRESS"A"
DATAIN"A"
CLK"B"
R/
W"B"
BANK ADDRESS
AND ADDRESS"B"
DATAOUT"B"
tSW
tHW
tSA
tHA
tSD
tHD
tSW
tHW
tSA
tHA
tCD2
Dn
An
Dn
5618 drw 10
tDC
tCO(3)
Timing Waveform of Port A Write to Pipelined Port B Read(1,2,4)
NOTES:
1.
CE0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH.
2.
OE = VIL for Port "B", which is being read from. OE = VIH for Port "A", which is being written to.
3. If tCO < minimum specified, then operations from both ports are INVALID. If tCO
≥ minimum, then data from Port "B" read is available on first Port "B" clock cycle
(ie, time from write to valid read on opposite port will be tCO + tCYC2 + tCD2).
4. All timing is the same for Left and Right ports. Port "A" may be either Left or Right port. Port "B" is the opposite of Port "A"
Timing Waveform with Port-to-Port Flow-Through Read(1,2,4)
DATAIN "A"
CLK "B"
R/
W "B"
BANK ADDRESS
AND ADDRESS "A"
R/
W "A"
CLK "A"
BANK ADDRESS
AND ADDRESS "B"
An
Dn
tDC
DATAOUT "B"
5618 drw 11
Dn
tSW tHW
tSA
tHA
tSD
tHD
tHW
tCD1
tCO(3)
tDC
tSA
tSW
tHA
NOTES:
1.
CE0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH.
2.
OE = VIL for the Right Port, which is being read from. OE = VIH for the Left Port, which is being written to.
3. If tCO < minimum specified, then operations from both ports are INVALID. If tCO
≥ minimum, then data from Port "B" read is available on first Port "B" clock cycle
(i.e., time from write to valid read on opposite port will be tCO + tCD1).
4. All timing is the same for both left and right ports. Port "A" may be either left or right port. Port "B" is the opposite of Port "A".
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT70V7519S166BFI | HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70V7519S166DR | HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70V7519S166DRI | HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70V7519S200DR | HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70V7519S200DRI | HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT70V7519S166BF8 | 功能描述:IC SRAM 9MBIT 166MHZ 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7519S166DR | 功能描述:IC SRAM 9MBIT 166MHZ 208QFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7519S166DRI | 功能描述:IC SRAM 9MBIT 166MHZ 208QFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7519S200BC | 功能描述:IC SRAM 9MBIT 200MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7519S200BC8 | 功能描述:IC SRAM 9MBIT 200MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。