參數(shù)資料
型號(hào): IDT70V7519S166BF
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
中文描述: 256K X 36 DUAL-PORT SRAM, 12 ns, PBGA208
封裝: FBGA-208
文件頁(yè)數(shù): 3/22頁(yè)
文件大?。?/td> 490K
代理商: IDT70V7519S166BF
6.42
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
11
AC Electrical Characteristics Over the Operating Temperature Range
(Read and Write Cycle Timing)(2,3) (VDD = 3.3V ± 150mV, TA = 0°C to +70°C)
NOTES:
1. The Pipelined output parameters (tCYC2, tCD2) apply to either or both left and right ports when
FT/PIPEX = VIH. Flow-through parameters (tCYC1, tCD1) apply when
FT/PIPEX = VIL for that port.
2. All input signals are synchronous with respect to the clock except for the asynchronous Output Enable (
OE) and FT/PIPE. FT/PIPE should be treated as a
DC signal, i.e. steady state during operation.
3. These values are valid for either level of VDDQ (3.3V/2.5V). See page 5 for details on selecting the desired operating voltage levels for each port.
70V7519S200
(5)
Com 'l Only
70V7519S166
(3,4)
Com 'l
& Ind
70V7519S133
(3)
Com 'l
& Ind
Sym bol
Param eter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
tCY C1
Clo ck Cycle Time (Flo w-Thro ug h)(1)
15
____
20
____
25
____
ns
tCY C2
Clock Cycle Time (P ipelined)(1)
5
____
6
____
7.5
____
ns
tCH1
Clo ck Hig h Time (Flo w-Thro ug h)(1)
5
____
6
____
7
____
ns
tCL1
Clo ck Lo w Tim e (Flow-Thro ugh)(1)
5
____
6
____
7
____
ns
tCH2
Clock High Time (P ipelined)(2)
2.0
____
2.1
____
2.6
____
ns
tCL2
Clock Lo w Tim e (P ipelined)(1)
2.0
____
2.1
____
2.6
____
ns
tR
Clo ck Rise Time
____
1.5
____
1.5
____
1.5
ns
tF
Clo ck Fall Time
____
1.5
____
1.5
____
1.5
ns
tSA
A d dre ss Se tup Tim e
1.5
____
1.7
____
1.8
____
ns
tHA
Ad dre ss Ho ld Tim e
0.5
____
0.5
____
0.5
____
ns
tSC
Chip E nab le S e tup Time
1.5
____
1.7
____
1.8
____
ns
tHC
Chip E nab le Ho ld Time
0.5
____
0.5
____
0.5
____
ns
tSW
R/W S e tup Time
1.5
____
1.7
____
1.8
____
ns
tHW
R/W Ho ld Time
0.5
____
0.5
____
0.5
____
ns
tSD
Inp ut Data S e tup Time
1.5
____
1.7
____
1.8
____
ns
tHD
Input Data Ho ld Tim e
0.5
____
0.5
____
0.5
____
ns
tSA D
ADS Se tup Time
1.5
____
1.7
____
1.8
____
ns
tHA D
ADS Ho ld Time
0.5
____
0.5
____
0.5
____
ns
tSCN
CNTEN Se tup Time
1.5
____
1.7
____
1.8
____
ns
tHCN
CNTEN Ho ld Time
0.5
____
0.5
____
0.5
____
ns
tSRPT
REPEAT Se tup Time
1.5
____
1.7
____
1.8
____
ns
tHRP T
REPEAT Ho ld Time
0.5
____
0.5
____
0.5
____
ns
tOE
Outp ut Enab le to Data Valid
____
4.0
____
4.0
____
4.2
ns
tOLZ
O utp ut Enab le to O utp ut Lo w-Z
0.5
____
0.5
____
0.5
____
ns
tOHZ
Outp ut Enab le to O utp ut Hig h-Z
1
3.4
1
3.6
1
4.2
ns
tCD1
Clo ck to Data Valid (Flo w-Thro ug h)(1)
____
10
____
12
____
15
ns
tCD2
Clock to Data Valid (Pipelined )(1)
____
3.4
____
3.6
____
4.2
ns
tDC
Data Output Ho ld A fte r Clo ck Hig h
1
____
1
____
1
____
ns
tCK HZ
Clock High to O utp ut High-Z
13.4
13.6
14.2
ns
tCKLZ
Clo ck Hig h to O utp ut Lo w-Z
0.5
____
0.5
____
0.5
____
ns
Port-to-Port Delay
tCO
Clo ck-to -Clo ck O ffse t
5.0
____
6.0
____
7.5
____
ns
5618 tb l 11
4. 166MHz Industrial Temperature not available in BF-208 package.
5. This speed grade available when VDDQ = 3.3.V for a specific port (i.e., OPTx = VIH). This speed grade available in BC-256 package only.
相關(guān)PDF資料
PDF描述
IDT70V7519S166BFI HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7519S166DR HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7519S166DRI HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7519S200DR HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7519S200DRI HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT70V7519S166BF8 功能描述:IC SRAM 9MBIT 166MHZ 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7519S166DR 功能描述:IC SRAM 9MBIT 166MHZ 208QFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7519S166DRI 功能描述:IC SRAM 9MBIT 166MHZ 208QFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7519S200BC 功能描述:IC SRAM 9MBIT 200MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7519S200BC8 功能描述:IC SRAM 9MBIT 200MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)