參數(shù)資料
型號: IBM13M32734BCE
廠商: IBM Microeletronics
英文描述: 32M x 72 2-Bank Registered/Buffered SDRAM Module(32M x 72 2組寄存/緩沖同步動態(tài)RAM模塊)
中文描述: 32M × 72配置2,銀行注冊/緩沖內(nèi)存模組(32M × 72配置2組寄存/緩沖同步動態(tài)內(nèi)存模塊)
文件頁數(shù): 13/21頁
文件大?。?/td> 328K
代理商: IBM13M32734BCE
IBM13M32734BCE
32M x 72 2-Bank Registered/Buffered SDRAM Module
19L7293.E93875A
8/99
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 13 of 21
Operating, Standby, and Refresh Currents
(T
A
= 0 to +70
°
C, V
DD
= 3.3V
±
0.3V)
Parameter
Symbol
Test Condition
Speed
Units
Notes
f
CK
= 100Mhz
-260, -360
f
CK
= 66Mhz
-260, -360
Burst Operating Mode/Active Standby
I
CC4
/I
CC3N
CKE
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
2399
2301
mA
1, 2, 3
Burst Operating Mode/Precharge
Standby
I
CC4
/I
CC2N
CKE
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
2259
2211
mA
1, 2, 3
Burst Operating Mode/Auto Refresh
I
CC4
/I
CC5
CKE
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
4547
3903
mA
1, 2, 3
Non-burst Operating Mode/Active
Standby
I
CC1
/I
CC3N
CKE
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
2207
1833
mA
1, 2, 3
Non-burst Operating Mode/Precharge
Standby
I
CC1
/I
CC2N
CKE
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
1685
1311
mA
1, 2, 3
Non-burst Operating Mode/Auto
Refresh
I
CC1
/I
CC5
CKE
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
4187
3273
mA
1, 3
Active Standby/Active Standby
I
CC3N
/I
CC3N
CKE
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
1487
1383
mA
3
Active Standby/Precharge Standby
I
CC3N
/I
CC2N
CKE
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
1397
1293
mA
3
Active Standby/Auto Refresh
I
CC3N
/I
CC5
CKE
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
3467
2823
mA
1, 3
Precharge Standby/Precharge
Standby
I
CC2N
/I
CC2N
CKE
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
1307
1203
mA
3
Precharge Standby/Auto Refresh
I
CC2N
/I
CC5
CKE
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
3377
2733
mA
1, 3
Auto Refresh/Auto Refresh
I
CC5
/I
CC5
CKE
V
IH
(min), t
CK
= min,
S0 - S3S0 - S3
5229
4101
mA
1, 3
Active Standby Power Down/Active
Standby Power Down
I
CC3p
/I
CC3p
CKE
V
IL
(max), t
CK
= min,
S0 - S3 =V
IH
(min)
515
411
mA
3
Active Standby Power Down/Pre-
charge Standby Power Down
I
CC3p
/I
CC2p
CKE
V
IL
(max), t
CK
= min,
S0 - S3 =V
IH
(min)
479
375
mA
3
Precharge Standby Power Down/Pre-
charge Standby Power Down
I
CC2p
/I
CC2p
CKE
V
IL
(max), t
CK
= min,
S0 - S3 =V
IH
(min)
443
339
mA
3
Precharge Standby Non-power
Down/Precharge Standby Non-power
Down (NO CLOCK)
I
CC2NS
/I
CC2NS
CKE
V
IH
(min), t
CK
= Infinity,
S0 - S3 =V
IH
(min)
251
251
mA
3
Precharge Standby Power Down/Pre-
charge Standby Power Down (NO
CLOCK)
I
CC2PS
/I
CC2PS
CKE
V
IH
(min), t
CK
= Infinity,
S0 - S3 =V
IH
(min)
71
71
mA
3
1. Input signals are changed once during t
CK
(min). t
CK
(min) = 10ns for -260, -360;
2. The specified values are obtained with the output open.
3. These parameters and symbols refer to a combination of physical bank 0/physical bank 1.
Discontinued (4/1/00 - last order; 7/31/00 - last ship)
相關(guān)PDF資料
PDF描述
IBM13M32734CCA 32M x 72 1 Bank Registered/Buffered SDRAM Module(32M x 72 1組寄存/緩沖同步動態(tài)RAM模塊)
IBM13M32734CCB 32M x 72 1-Bank Registered / Buffered SDRAM Module(32M x 72 1組寄存/緩沖同步動態(tài)RAM模塊)
IBM13M32734JCA 32M x 72 Two Bank Registered/Buffered SDRAM Module(64M x 64 2組不帶緩沖同步動態(tài)RAM模塊)
IBM13M64734BCA 64M x 72 1 Bank Registered/Buffered SDRAM Module(64M x 72 1組寄存/緩沖同步動態(tài)RAM模塊)
IBM13M64734CCA 64M x 72 2-Bank Registered/Buffered SDRAM Module(64M x 72 2組寄存/緩沖同步動態(tài)RAM模塊)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IBM14H5481 制造商:AVED Memory Products 功能描述:
IBM14H5540 制造商:AVED MEMORY PRODUCTS 功能描述: 制造商:AVED Memory Products 功能描述:
IBM17R8251 制造商:AVED Memory Products 功能描述:
IBM17R8252 制造商:AVED Memory Products 功能描述:
IBM1805T 制造商:Schneider Electric 功能描述:IBM1805T