參數(shù)資料
型號(hào): IBM0165805P
廠商: IBM Microeletronics
英文描述: 8M x 8 12/11 EDO DRAM(8M x 8 動(dòng)態(tài)RAM(超頁(yè)面模式并帶23條地址線,其中12條為行地址選通,11條為列地址選通))
中文描述: 8米× 8 12/11 EDO公司的DRAM(8米× 8動(dòng)態(tài)隨機(jī)存儲(chǔ)器(超頁(yè)面模式并帶23條地址線,其中12條為行地址選通,11條為列地址選通))
文件頁(yè)數(shù): 4/29頁(yè)
文件大?。?/td> 946K
代理商: IBM0165805P
IBM0165805B
IBM0165805P
8M x 8 12/11 EDO DRAM
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 4 of 29
88H2009
GA14-4254-02
Revised 11/97
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
Notes
V
CC
Power Supply Voltage
-0.5 to 4.6
V
1
V
IN
Input Voltage
-0.5 to min (V
CC
+0.5, 4.6)
V
1
V
OUT
Output Voltage
-0.5 to min (V
CC
+0.5, 4.6)
V
1
T
OPR
Operating Temperature
0 to +70
°
C
1
T
STG
Storage Temperature
-55 to +150
°
C
1
P
D
Power Dissipation
1.0
W
1
I
OUT
Short Circuit Output Current
50
mA
1
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Recommended DC Operating Conditions
(T
A
=0 to 70
°
C)
Symbol
Parameter
Min.
Typ.
Max.
Units
Notes
V
CC
Supply Voltage
3.0
3.3
3.6
V
1
V
IH
Input High Voltage
2.0
V
CC
+ 0.3
V
1, 2
V
IL
Input Low Voltage
-0.3
0.8
V
1, 2
1. All voltages referenced to V
SS
.
2. V
IH
may overshoot to V
CC
+ 2.0V for pulse widths of
4.0ns with 3.3 Volt. V
IL
may undershoot to -2.0V for pulse widths
4.0ns
with 3.3 Volt. Pulse widths measured at 50% points with amplitude measured peak to DC reference
Capacitance
(T
A
=0 to +70
°
C, V
CC
=3.3
±
0.3V, f=1MHz)
Symbol
Parameter
Min.
Max.
Units
Notes
C
I1
Input Capacitance (A0 - A11)
5
pF
C
I2
Input Capacitance (RAS, CAS, WE, OE)
7
pF
C
I3
Data I/O Capacitance (I/O0 - I/O7)
7
pF
Discontinued (12/98 - last order; 3/99 last ship)
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