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參數(shù)資料
| 型號： | IBM0165805P |
| 廠商： | IBM Microeletronics |
| 英文描述： | 8M x 8 12/11 EDO DRAM(8M x 8 動態(tài)RAM（超頁面模式并帶23條地址線，其中12條為行地址選通，11條為列地址選通）) |
| 中文描述： | 8米× 8 12/11 EDO公司的DRAM（8米× 8動態(tài)隨機(jī)存儲器（超頁面模式并帶23條地址線，其中12條為行地址選通，11條為列地址選通）） |
| 文件頁數(shù)： | 1/29頁 |
| 文件大?。?/td> | 946K |
| 代理商： | IBM0165805P |
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IBM0165805B
IBM0165805P
8M x 8 12/11 EDO DRAM
88H2009
GA14-4254-02
Revised 11/97
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 29
Features
8,388,608 word by 8 bit organization
Single 3.3
±
0.3V power supply
Extended Data Out
CAS before RAS Refresh
- 4096 cycles/Retention Time
RAS only Refresh
- 4096 cycles/Retention Time
64ms Standard Power (SP) Retention Time
128ms Low Power (LP) Retention Time
Hidden Refresh
Self Refresh (400
μ
A) - LP Version Only
Read-Modify-Write
Performance:
Max. Power Dissipation (-50)
- Active: 504mW
- Standby (SP version): 2.0 mA
- Standby (LP version): 0.2 mA
Package: SOJ-32 (400mil), TSOP-32 (400mil)
-50
-60
t
RAC
RAS Access Time
50ns
60ns
t
CAC
CAS Access Time
13ns
15ns
t
AA
Column Address Access Time
25ns
30ns
t
RC
Cycle Time
84ns
104ns
t
HPC
Hyper Page Mode Cycle Time
20ns
25ns
Description
The IBM0165805B/P is a dynamic RAM organized
8,388,608 words by 8 bits. This device is fabricated
in IBM’s most advanced CMOS silicon gate process
technology. The circuit and process design allow
this DRAM to achieve high performance and low
power dissipation. The IBM0165805B/P operates
with a single 3.3
±
0.3V power supply, and inter-
faces directly with either TTL or CMOS levels. The
23 addresses required to access any bit of data are
multiplexed (12 are strobed with RAS, 11 are
strobed with CAS). They are packaged in a 32 pin
plastic SOJ (400mil
×
825mil), and a 32pin plastic
TSOP type II (400mil
×
825mil).The IBM0165805P
parts are low power devices supporting Self
Refresh and a 128ms retention time.
Pin Assignments
(Top View)
VCC
I/O0
I/O1
I/O2
I/O3
NC
VCC
WE
RAS
A0
A1
A2
A3
A4
A5
VCC
32 VSS
31 I/O7
30 I/O6
29 I/O5
28 I/O4
27 VSS
26
CAS
25
OE
24 NC
23 A11
22 A10
21 A9
20 A8
19 A7
18 A6
17 VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Pin Description
RAS
Row Address Strobe
CAS
Column Address Strobe
WE
Read/write Input
A0 - A11
Address Inputs
OE
Output Enable
I/O0 - I/O7
Data Input/output
V
CC
Power (+3.3V)
V
SS
Ground
IBM0165805B8M x 812/11, 3.3V, EDO. IBM0165805P8M x 812/11, 3.3V, LP, SR, EDO.
Discontinued (12/98 - last order; 3/99 last ship)
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