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| 型號： | IBM0164405P |
| 廠商： | IBM Microeletronics |
| 英文描述： | 16M x 4 13/11 EDO DRAM(16M x 4 動態(tài)RAM（超頁面模式并帶24條地址線，其中13條為行地址選通，11條為列地址選通）) |
| 中文描述： | 1,600 × 4 13/11 EDO公司的DRAM（1,600 × 4動態(tài)隨機存儲器（超頁面模式并帶24條地址線，其中13條為行地址選通，11條為列地址選通）） |
| 文件頁數(shù)： | 1/29頁 |
| 文件大?。?/td> | 1309K |
| 代理商： | IBM0164405P |
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IBM0164405B
IBM0164405P
16M x 4 13/11 EDO DRAM
88H2007
GA14-4252-01
Revised 4/97
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 29
Features
16,777,216 word by 4 bit organization
Single 3.3
±
0.3V power supply
Extended Data Out
CAS before RAS Refresh
- 4096 cycles/Retention Time
RAS only Refresh
- 8192 cycles/Retention Time
64ms Standard Power (SP) Retention Time
256ms Low Power (LP) Retention Time
Hidden Refresh
Self Refresh (400
μ
A) - LP Version Only
Read-Modify-Write
Performance:
Low Power Dissipation (-50)
- Active: 360mW
- Standby (SP version): 1.0 mA
- Standby (LP version): 0.2 mA
Package: SOJ-32(400mil), TSOP-32(400mil)
-50
-60
t
RAC
RAS Access Time
50ns
60ns
t
CAC
CAS Access Time
13ns
15ns
t
AA
Column Address Access Time
25ns
30ns
t
RC
Cycle Time
84ns
104ns
t
HPC
Hyper Page Mode Cycle Time
20ns
25ns
Description
The IBM0164405B/P is a dynamic RAM organized
16,777,216 words by 4 bits. This device is fabricated
in IBM’s most advanced CMOS silicon gate process
technology. The circuit and process design allow
this DRAM to achieve high performance and low
power dissipation. The IBM0164405B/P operates
with a single 3.3
±
0.3V power supply, and inter-
faces directly with either TTL or CMOS levels. The
24 addresses required to access any bit of data are
multiplexed (13 are strobed with RAS, 11 are
strobed with CAS). They are packaged in a 32 pin
plastic SOJ (400mil
×
825mil), and a 32 pin plastic
TSOP type II (400mil
×
825mil). The IBM0164405P
parts are low power devices supporting Self Refresh
and a 256ms retention time.
.
Pin Assignments
(Top View)
VCC
I/O0
I/O1
NC
NC
NC
NC
WE
RAS
A0
A1
A2
A3
A4
A5
VCC
32 VSS
31 I/O3
30 I/O2
29 NC
28 NC
27 NC
26
CAS
25
24 A12
23 A11
22 A10
21 A9
20 A8
19 A7
18 A6
17 VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Pin Description
RAS
Row Address Strobe
CAS
Column Address Strobe
WE
Read/write Input
A0 - A12
Address Inputs
OE
Output Enable
I/O0 - I/O3
Data Input/output
V
CC
Power (+3.3V)
V
SS
Ground
IBM0164405B16M x 413/11, 3.3V, EDO. IBM0164405P16M x 413/11, 3.3V, LP, SR, EDO.
Discontinued (
12
/98 - last order;
3
/9
9
last ship)
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| IBM0165165P | 4M x 16 12/10 EDO DRAM(4M x 16 動態(tài)RAM（超頁面模式讀寫并帶22條地址線，其中12條為行地址選通，10條為列地址選通）) |
| IBM0165405B | 16M x 4 12/12 EDO DRAM(16M x 4 動態(tài)RAM（超頁面模式并帶24條地址線，其中12條為行地址選通，12條為列地址選通）) |
| IBM0165405P | 16M x 4 12/12 EDO DRAM(16M x 4 動態(tài)RAM（超頁面模式并帶24條地址線，其中12條為行地址選通，12條為列地址選通）) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IBM0165165PT3C50 | 制造商:IBM 功能描述:75H3120 |
| IBM0165805BJ3C50 | 制造商:IBM 功能描述:75H2806 |
| IBM0165805BT3C60 | 制造商:IBM 功能描述:* |
| IBM0165805PT3C50 | 制造商:IBM 功能描述:75H3108 |
| IBM0165805PT3D60 | 制造商:IBM 功能描述:88H4086 |
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