- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370795 > HYE25L256160AC-8 (INFINEON TECHNOLOGIES AG) 256-Mbit Mobile-RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | HYE25L256160AC-8 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 256-Mbit Mobile-RAM |
| 中文描述： | 256兆移動(dòng)RAM |
| 文件頁數(shù)： | 22/55頁 |
| 文件大?。?/td> | 1053K |
| 代理商： | HYE25L256160AC-8 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁當(dāng)前第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁
HYE25L256160AC
256-Mbit Mobile-RAM
Electrical Characteristics
Data Sheet
22
V1.1, 2003-04-16
Figure 4
Measurement Conditions for
t
AC
and
t
OH
CAS to CAS command delay
Refresh Cycle
Refresh period
Self refresh exit time
Read Cycle
Data output hold time
Data output from high to low impedance
t
LZ
Data output from low to high impedance
t
HZ
DQM data output disable latency
Write Cycle
Write recovery time
DQM write data mask latency
t
CCD
1
–
1
–
t
CK
–
t
REF
t
SREX
–
1
64
–
–
1
64
–
ms
t
CK
–
–
t
OH
3
0
3
–
–
–
8
2
3
1
3
–
–
–
7
2
ns
ns
ns
t
CK
4)7)8)
–
–
–
t
DQZ
t
WR
t
DQW
14
0
–
–
14
0
–
–
ns
t
CK
9)
–
1)
–25
°
C
≤
T
CASE
≤
+85
°
C; recommended operating conditions unless otherwise noted
2) For proper power-up see the operation section of this data sheet.
3) Symbol index 2 and 3 refer to CL = 2 and CL = 3.
4) AC timing tests are referenced to the 0.9 V crossover point. The transition time is measured between
V
IH
and
V
IL
. All AC
measurements assume
t
T
= 1 ns with the AC output load circuit (details will be defined later). Specified
t
AC
and
t
OH
parameters are measured with a 30 pF only, without any resistive termination and with a input signal of 1
V
/
ns
edge rate
(see
Figure 4
).
5) If clock rising time is longer than 1 ns, a time (
t
T
/2 - 0.5) ns has to be added to this parameter.
6) If
t
T
is longer than 1 ns, a time (
t
T
- 1) ns has to be added to this parameter.
7) These parameter account for the number of clock cycle and depend on the operating frequency of the clock, as follows:
the number of clock cycle = specified value of timing period (counted in fractions as a whole number)
8) Access time from clock
t
AC
is 4.6 ns for –7.5 components with no termination and 0 pF load,
Data out hold time
t
OH
is 1.8 ns for –7.5 components with no termination and 0 pF load.
9) The write recovery time of
t
WR
= 14 ns allows the use of one clock cycle for the write recovery time when the memory
operation frequency is equal or less than 72MHz. For all memory operation frequencies higher than 72MHz two clock
cycles for
t
WR
are mandatory. INFINEON recommends to use two clock cylces for the write recovery time in all applications.
Table 10
Parameter
AC Timing Characteristics
1)2)
(cont’d)
Symbol
–8
max.
–7.5
max.
Unit Note/ Test Condition
min.
min.
30 pF
I/O
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYE25L256160AF | 256MBit Mobile-RAM |
| HYE25L256160AF-75 | CAP TANT 10UF 6.3V 20% SMD |
| HYE25L256160AC-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYM321000GS-60 | 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module |
| HYM321000S-60 | 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYE25L256160AF | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256MBit Mobile-RAM |
| HYE25L256160AF-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYE25L256160AF-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256MBit Mobile-RAM |
| HYESD0514P | 制造商:HY 制造商全稱:HY ELECTRONIC CORP. 功能描述:4 Channel Low Capacitance ESD Protection Diode Array |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。