參數(shù)資料
型號： HYE25L256160AC-8
廠商： INFINEON TECHNOLOGIES AG
英文描述： 256-Mbit Mobile-RAM
中文描述： 256兆移動RAM
文件頁數(shù)： 2/55頁
文件大?。?/td> 1053K
代理商： HYE25L256160AC-8
Edition 2003-04-16
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
Infineon Technologies AG 2003.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide
(
www.infineon.com
).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body, or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
HYE25L256160AC
Revision History:
Previous Version:
Page
all
Page 13
f
Page 15
2003-04-16
2001-11-23
V1.1
V1.0
Subjects (major changes since last version)
applied new data sheet template Din-A4
Temperature Compensated Self Refresh with On-Chip Temperature Sensor
Table Operation Definition extended by two rows “Clock Suspend Entry” and “Clock Suspend
Exit”; Note 5 extended by “When this command is asserted during a burst cycle the device …”
“Self Refresh” description improved
“Simplified State Diagram” added
relaxed Absolute Maximum Ratings (+0.5/–1.0 V instead of ±0.3 V relative to
V
DD
/
V
SS
)
Note 4: relaxed over-/underswing delta to 2.0 V
deleted
V
DD
and
V
DDQ
range above tables and partly replaced by note “(Recommended
Operating Conditions unless otherwise noted)“
PC133 replaced by –7.5
table operating currents updated, symbols changed from
I
CC
to
I
DD
, value type “max.” added,
I
DD6
named “self refresh current”,
I
DD1
description (“Single bank access cycles”) updated
t
CK
defined by Note 3 or set to infinity; Note 4: “assumed” replaced by “used”
revised timing diagram SPT03919-4
TFBGA package outline moved to end , added “tolerance
±
0.1mm for length and width”
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ff
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f
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Page 54
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