參數(shù)資料
型號: HYE18P32161AC-85
廠商: INFINEON TECHNOLOGIES AG
英文描述: 32M Asynchronous/Page CellularRAM
中文描述: 32M的異步/頁的CellularRAM
文件頁數(shù): 24/33頁
文件大?。?/td> 641K
代理商: HYE18P32161AC-85
HYE18P32161AC(-/L)70/85
32M Asynch/Page CellularRAM
Functional Description
Data Sheet
24
V2.0, 2003-12-16
Figure 14
Asynchronous Write - UB, LB Controlled (OE =
V
IH
or
V
IL
, ZZ =
V
IH
)
The programming of control register in asynchronous mode is performed in the similar manner as asynchronous
write except ZZ being held low during the operation. Note that ZZ has to meet set-up time (
t
ZZWE
) and hold time
(
t
WEZZ
)of valid state (= Low) in reference to WE falling and rising edge, respectively. CS1 should toggle at the end
of the operation to get ready for following access.
Figure 15
Asynchronous Write to Control Register (OE =
V
IH
or
V
IL
)
Don't Care
A20-A0
ADDRESS
CS1
WE
UB, LB
DQx OUT
t
CW
t
WR
t
WC
t
AS
t
WP
t
AW
t
BW
Data In Valid
DQx IN
t
DW
t
DH
High-Z
t
BLZ,
t
LZ
t
WHZ
t
BPH
Don't Care
A20-A0
RCR OPCODE
CS1
WE
UB, LB
DQx OUT
t
CW
t
WR
t
WC
t
WP
t
AW
DQx IN
t
AS
ZZ
t
ZZWE
t
CDZZ
High-Z
High-Z
t
WPH
t
WEZZ
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