參數(shù)資料
型號: HYE18P32161AC-85
廠商: INFINEON TECHNOLOGIES AG
英文描述: 32M Asynchronous/Page CellularRAM
中文描述: 32M的異步/頁的CellularRAM
文件頁數(shù): 21/33頁
文件大?。?/td> 641K
代理商: HYE18P32161AC-85
t
OLZ
Data Sheet
21
V2.0, 2003-12-16
HYE18P32161AC(-/L)70/85
32M Asynch/Page CellularRAM
Functional Description
2.4.1
If activated by RCR.Bit7 page mode allows to toggle the four lower address bits (A3 to A0) to perform subsequent
random read accesses (max. 16-words by A3 - A0) at much faster speed than 1
st
read access. Page mode
operation supports only read access in CellularRAM. As soon as page mode is activated, CS1 low time restriction
(
t
CSL
) applies. In case of CS1 staying low longer than
t
CSL
limit, then it is alternative way to toggle non-page address
(A20 - A4) no later than
t
CSL,max
. Therefore the usage of page mode is only recommended in systems which can
respect this limitation.
Please see also application note on
Page 30
.
Page Read Mode
Figure 11
Asynchronous Page Read Mode (ZZ =
V
IH
)
Don't Care
A20-A4
ADDRESS
CS1
UB, LB
OE
WE
DQ15-DQ0
t
CO
t
LZ
t
BLZ
t
BHZ
t
OHZ
t
RC
A3-A0
ADDRESS
t
AA
Data
ADR
ADR
ADR
ADR
t
PAA
t
CSL
t
HZ
t
PC
Data
Data
Data
Data
t
OH
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