參數(shù)資料
型號(hào)： HYB3117405BJ-50
廠(chǎng)商： SIEMENS A G
元件分類(lèi)： DRAM
英文描述： 3.3V 4M x 4-Bit EDO-Dynamic RAM
中文描述： 4M X 4 EDO DRAM, 50 ns, PDSO24
封裝： 0.300 INCH, PLASTIC, SOJ-24
文件頁(yè)數(shù)： 6/26頁(yè)
文件大?。?/td> 285K
代理商： HYB3117405BJ-50
Semiconductor Group
6
HYB 3116(7)405BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 °C
Storage temperature range.........................................................................................– 55 to 150 °C
Input/output voltage ................................................................................-0.5 to min(Vcc+0.5, 4.6) V
Power supply voltage.................................................................................................- 0.5 V to 4.6 V
Power dissipation.................................................................................................................... 0.5 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
DC Characteristics
(values in brackets for HYB3117405)
T
A
= 0 to 70 °C,
V
SS
= 0 V,
V
CC
= 3.3 V
±
0.3 V,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
Input high voltage
V
IH
V
IL
V
OH
V
OL
V
OH
V
OL
I
I(L)
2.0
Vcc+0.5
V
1)
Input low voltage
TTL Output high voltage (
I
OUT
= – 2 mA)
TTL Output low voltage (
I
OUT
= 2 mA)
CMOS Output high voltage (
I
OUT
= –100 uA)
CMOS Output low voltage (
I
OUT
= 100 uA)
Input leakage current
(0 V
≤
V
IH
≤
Vcc + 0.3V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V
≤
V
OUT
≤
Vcc + 0.3V)
Average
V
CC
supply current:
– 0.5
0.8
V
1)
2.4
–
V
1)
–
0.4
V
1)
VCC-0.2
–
V
–
0.2
V
μ
A
– 10
10
1)
I
O(L)
– 10
10
μ
A
1)
-50 ns version
-60 ns version
-70 ns version
(RAS, CAS, address cycling,
t
RC
=
t
RC
min.)
Standby
V
CC
supply current (RAS = CAS =
V
IH
)
I
CC2
I
CC1
–
–
–
100(120)
90 (110)
80 (100)
mA
mA
mA
2) 3) 4)
2) 3) 4)
2) 3) 4)
–
2
mA
–
相關(guān)PDF資料
PDF描述
HYB3116405BJ-50 3.3V 4M x 4-Bit EDO-Dynamic RAM
HYB3117800BSJ-50 2M x 8-Bit Dynamic RAM
HYB3117800BSJ-70 2M x 8-Bit Dynamic RAM
HYB3117800BSJ-60 2M x 8-Bit Dynamic RAM
HYB3117800BSJL-50 x8 Fast Page Mode DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3117405BJ-60 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM
HYB3117405BJ-70 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM
HYB3117405BT-50 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB3117405BT-60 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB3117405BT-70 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM
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