參數(shù)資料
型號: HYB25D256160TT-3
廠商: INFINEON TECHNOLOGIES AG
英文描述: 240 x 128 pixel format, Blue LED backlight
中文描述: 記憶譜
文件頁數(shù): 73/94頁
文件大?。?/td> 3326K
代理商: HYB25D256160TT-3
Data Sheet
75
Rev. 1.6, 2004-12
HYB25D256[16/40/80]0C[E/C/F/T](L)
256 Mbit Double-Data-Rate SDRAM
Electrical Characteristics
4.5
IDD Current Measurement Conditions
Legend: A = Activate, R = Read, RA = Read with Autoprecharge, P = Precharge, N = NOP or DESELECT
IDD1: Operating Current: One Bank Operation
1. General test condition
a) Only one bank is accessed with
tRC,MIN.
b) Burst Mode, Address and Control inputs are changing once per NOP and DESELECT cycle.
c) 50% of data changing at every transfer
d)
IOUT = 0 mA.
2. Timing patterns
a) DDR266A (133 MHz, CL = 2):
tCK = 7.5 ns, BL = 4, tRCD = 3 × tCK, tRC = 9 × tCK, tRAS = 5 × tCK
Setup: A0 N N R0 N P0 N N N
Read: A0 N N R0 N P0 N NN - repeat the same timing with random address changing
Table 24
IDD Specification
Symbol –5
–6
–7
Unit Note/Test Condition1)
1) Test conditions for typical values:
VDD = 2.5 V (DDR333), VDD = 2.6 V (DDR400), TA = 25 °C, test conditions for maximum
values:
VDD = 2.7 V, TA = 10 °C
DDR400B
DDR333
DDR266A
Typ.
Max.
Typ.
Max.
Typ.
Max.
IDD0
70
90
60
75
50
65
mA
×4/×8 2)3)
2)
IDD specifications are tested after the device is properly initialized and measured at 133 MHz for DDR266, 166 MHz for
DDR333, and 200 MHz for DDR400.
3) Input slew rate = 1 V/ns.
75
90
65
75
55
65
mA
×16 3)
IDD1
80
100
70
85
65
75
mA
×4/×8 3)
95
110
80
95
70
85
mA
×16 3)
IDD2P
4
5
4
5
3
4mA
IDD2F
30
36
25
30
20
24
mA
IDD2Q
20
28
17
24
15
21
mA
IDD3P
13
18
11
15
9
13
mA
IDD3N
38
45
32
38
28
36
mA
43
54
36
45
30
40
mA
×16 3)
IDD4R
85
100
70
85
60
70
mA
×4/×8 3)
100
120
85
100
70
85
mA
×16 3)
IDD4W
90
105
75
90
65
75
mA
×4/×8 3)
100
130
90
110
75
90
mA
×16 3)
IDD5
140
190
120
160
100
140
mA
IDD6
1.4
2.8
1.4
2.8
1.4
2.8mA
4)
4) Enables on-chip refresh and address counters.
1.0
1.1
mA
low power 5)
5) Low power available on request
IDD7
210
250
180
215
140
170
mA
×4/×8 3)
210
250
180
215
140
170
mA
×16 3)
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