參數(shù)資料
型號(hào)： HYB25D256160TT-3
廠商： INFINEON TECHNOLOGIES AG
英文描述： 240 x 128 pixel format, Blue LED backlight
中文描述： 記憶譜
文件頁(yè)數(shù)： 33/94頁(yè)
文件大?。?/td> 3326K
代理商： HYB25D256160TT-3
Data Sheet
39
Rev. 1.6, 2004-12
HYB25D256[16/40/80]0C[E/C/F/T](L)
256 Mbit Double-Data-Rate SDRAM
Functional Description
Figure 15
Read to Write: CAS Latencies (Burst Length = 4 or 8)
CAS Latency = 2
BST
NOP
Write
NOP
Read
DI a-b
CK
Command
Address
DQS
DQ
DM
DOa-n
DO a-n = data out from bank a, column n
1 subsequent elements of data out appear in the programmed order following DO a-n.
Data In elements are applied following Dl a-b in the programmed order, according to burst length.
Don’t Care
BAa, COL n
BAa, COL b
CL=2
tDQSS (min)
CAS Latency = 2.5
BST
NOP
Write
NOP
Read
CK
Command
Address
DQS
DQ
DM
DOa-n
BAa, COL n
BAa, COL b
CL=2.5
tDQSS (min)
Dla-b
Shown with nominal tAC, tDQSCK, and tDQSQ.
.DI a-b = data in to bank a, column b
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