參數(shù)資料
型號: HYB25D256160TT-3
廠商: INFINEON TECHNOLOGIES AG
英文描述: 240 x 128 pixel format, Blue LED backlight
中文描述: 記憶譜
文件頁數(shù): 51/94頁
文件大?。?/td> 3326K
代理商: HYB25D256160TT-3
Data Sheet
55
Rev. 1.6, 2004-12
HYB25D256[16/40/80]0C[E/C/F/T](L)
256 Mbit Double-Data-Rate SDRAM
Functional Description
3.5.4
Precharge
The Precharge command is used to deactivate the open row in a particular bank or the open row in all banks. The
bank(s) will be available for a subsequent row access some specified time (
t
RP) after the Precharge command is
issued. Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank
is to be precharged, inputs BA0, BA1 select the bank. When all banks are to be precharged, inputs BA0, BA1 are
treated as “Don’t Care”. Once a bank has been precharged, it is in the idle state and must be activated prior to any
Read or Write commands being issued to that bank.
Figure 30
Precharge Command
BA
HIGH
BA = bank address
CK
CKE
CS
RAS
CAS
WE
A10
BA0, BA1
Don’t Care
All Banks
One Bank
(if A10 is Low, otherwise Don’t Care).
A0-A9, A11, A12
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