參數(shù)資料
型號: HYB25D256160BTL-7F
廠商: INFINEON TECHNOLOGIES AG
英文描述: 256-Mbit Double Data Rate SDRAM, Die Rev. B
中文描述: 256兆雙倍數(shù)據(jù)速率SDRAM,模具版本B
文件頁數(shù): 38/77頁
文件大?。?/td> 1779K
代理商: HYB25D256160BTL-7F
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM, Die Rev. B
Page 38 of 77
2003-01-09, V1.1
Write to Read: Minimum DQSS, Odd Number of Data (3 bit Write), Interrupting (CAS
Latency = 2; Burst Length = 8)
DI a-b = data in for bank a, column b.
An interrupted burst is shown, 3 data elements are written.
2 subsequent elements of data in are applied in the programmed order following DI a-b.
t
WTR
is referenced from the first positive CK edge after the last desired data in pair (not the last desired data in element)
The Read command masks the last 2 data elements in the burst.
A10 is Low with the Write command (Auto Precharge is disabled).
The Read and Write commands are not necessarily to the same bank.
1 = This bit is correctly written into the memory array if DM is low.
2 = These bits are incorrectly written into the memory array if DM is low.
Don’t Care
T1
T2
T3
T4
T5
T6
NOP
NOP
NOP
Read
Write
NOP
CK
CK
Command
Address
BAa, COL b
BAa, COL n
t
WTR
DI a-b
DQS
DQ
CL = 2
t
DQSS
(min)
DM
1
2
2
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