參數(shù)資料
型號(hào)： HYB25D256160BTL-7F
廠商： INFINEON TECHNOLOGIES AG
英文描述： 256-Mbit Double Data Rate SDRAM, Die Rev. B
中文描述： 256兆雙倍數(shù)據(jù)速率SDRAM，模具版本B
文件頁(yè)數(shù)： 26/77頁(yè)
文件大?。?/td> 1779K
代理商： HYB25D256160BTL-7F
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM, Die Rev. B
Page 26 of 77
2003-01-09, V1.1
Data from any Read burst may be truncated with a Burst Terminate command, as shown on
Terminating a
Read Burst: CAS Latencies (Burst Length = 8)
on page 27. The Burst Terminate latency is equal to the read
(CAS) latency, i.e. the Burst Terminate command should be issued x cycles after the Read command, where
x equals the number of desired data element pairs.
Data from any Read burst must be completed or truncated before a subsequent Write command can be
issued. If truncation is necessary, the Burst Terminate command must be used, as shown on
Read to Write:
CAS Latencies (Burst Length = 4 or 8)
on page 28. The example is shown for t
DQSS
(min). The t
DQSS
(max)
case, not shown here, has a longer bus idle time. t
DQSS
(min) and t
DQSS
(max) are defined in the section on
Writes.
A Read burst may be followed by, or truncated with, a Precharge command to the same bank (provided that
Auto Precharge was not activated). The Precharge command should be issued x cycles after the Read com-
mand, where x equals the number of desired data element pairs (pairs are required by the 2n prefetch archi-
tecture). This is shown on
Read to Precharge: CAS Latencies (Burst Length = 4 or 8)
on page 29 for Read
latencies of 2 and 2.5. Following the Precharge command, a subsequent command to the same bank cannot
be issued until t
RP
is met. Note that part of the row precharge time is hidden during the access of the last data
elements.
In the case of a Read being executed to completion, a Precharge command issued at the optimum time (as
described above) provides the same operation that would result from the same Read burst with Auto Pre-
charge enabled. The disadvantage of the Precharge command is that it requires that the command and
address busses be available at the appropriate time to issue the command. The advantage of the Precharge
command is that it can be used to truncate bursts.
相關(guān)PDF資料
PDF描述
HYB25D256160BTL-8 256-Mbit Double Data Rate SDRAM, Die Rev. B
HYB25D256400BC-7F 256-Mbit Double Data Rate SDRAM, Die Rev. B
HYB25D256400BC-8 256-Mbit Double Data Rate SDRAM, Die Rev. B
HYB25D256160CC-6 256 Mbit Double Data Rate SDRAM
HYB25D256160CT-5 256 Mbit Double Data Rate SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB25D256160BTL-8 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256 Mbit Double Data Rate SDRAM
HYB25D256160CC-5 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:256-Mbit Double-Data-Rate SDRAM
HYB25D256160CC-6 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256 Mbit Double Data Rate SDRAM
HYB25D256160CE-5 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:256-Mbit Double-Data-Rate SDRAM
HYB25D256160CE-5A 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:256-Mbit Double-Data-Rate SDRAM
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