參數(shù)資料
型號(hào): HYB25D128323C-4.5
廠商: INFINEON TECHNOLOGIES AG
英文描述: 128 Mbit DDR SGRAM
中文描述: 128兆的DDR SGRAM
文件頁數(shù): 32/53頁
文件大?。?/td> 1166K
代理商: HYB25D128323C-4.5
HYB25D128323C[-3/-3.3/-3.6/-4.5/-5.0/L3.6/L4.5]
128 Mbit DDR SGRAM [4M x 32]
Register Set
Data Sheet
32
V1.7, 2003-07
interrupting Read command is satisfied. At this point, the data from the interrupting Read command appears. Read
to Read interval (CAS#(a) to CAS#(b) Command period,
t
CCD
) is minimum 1 CLK.
Figure 24
Read interrupted by Read
3.6.2
To interrupt a burst read with a write command, a Burst Stop command must be asserted to avoid data contention
on the I/O bus by placing the DQ's (Output drivers) in a high impedance state at least one clock cycle before the
Write Command is initiated (Last Output to Write Command Latency). To insure that the DQs are tri-stated one
cycle before the write operation begins, the Burst Stop command must be applied at least 3 clock cycles for CL =
2, at least 4 clock cycles for CL = 3 or at least 5 clock cycles for CL = 4 before the Write command.
Read Interrupted by a Write
Figure 25
Read interrupted by Write
CLK
READ a
DQSx
DQx
D-out
a0
Command
READ b
NOP
NOP
NOP
NOP
D-out
a1
D-out
b1
tCCD
Burst length = 4
CL = 2
D-out
b0
D-out
b3
D-out
b2
CLK
READ
DQSx
DQx
D-out
0
Command
BST
NOP
NOP
WRITE
NOP
D-out
1
D-in
1
Burst length = 4
CL = 2
D-in
0
D-in
3
D-in
2
Burst Stop to Write command latency
NOP
NOP
Burst Stop latency = CL
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相關(guān)代理商/技術(shù)參數(shù)
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HYB25D128323C-5 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128 Mbit DDR SGRAM
HYB25D128323CL3.6 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128 Mbit DDR SGRAM
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HYB25D128323CL-3.6 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128 Mbit DDR SGRAM
HYB25D128323CL4.5 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128 Mbit DDR SGRAM