參數資料
型號： HYB18L256160BF-75
廠商： INFINEON TECHNOLOGIES AG
英文描述： DRAMs for Mobile Applications
中文描述： 針對移動應用的DRAM
文件頁數： 36/49頁
文件大?。?/td> 1327K
代理商： HYB18L256160BF-75
DI x
HY[B/E]18L256160B[C/F]-7.5
256-Mbit Mobile-RAM
Functional Description
Data Sheet
36
V1.4, 2004-04-30
Figure 39
WRITE with Auto Precharge Interrupted by READ
Figure 40
WRITE with Auto Precharge Interrupted by WRITE
WR-AP = Write with Auto Precharge; READ = Read with or without Auto Precharge
CL = 2 and Burst Length = 4 in the case shown
Write with Auto Precharge to bank n is interrupted by subsequent Read to bank m
= Don't Care
CLK
Command
NOP
NOP
NOP
READ
NOP
Address
Bank n
Col b
Bank m
Col x
NOP
NOP
WR-AP
t
WR
(bank n)
CL=2
t
RP
(bank n)
DQ
DO x
DO x+1
DO x+3
DO b+1
DO b
DO x+2
WR-AP = Write with Auto Precharge; WRITE = Write with or without Auto Precharge
Burst Length = 4 in the case shown
Write with Auto Precharge to bank n is interrupted by subsequent Write to bank m
= Don't Care
CLK
t
RP
(bank n)
DI x+1
t
WR
(bank n)
DI x+1
Command
NOP
NOP
NOP
WRITE
NOP
WR-AP
NOP
NOP
Address
Bank n
Col b
Bank m
Col x
DQ
DI b+1
DI b
DI x+1
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