參數(shù)資料
型號： HYB18L256160BF-75
廠商： INFINEON TECHNOLOGIES AG
英文描述： DRAMs for Mobile Applications
中文描述： 針對移動應(yīng)用的DRAM
文件頁數(shù)： 30/49頁
文件大?。?/td> 1327K
代理商： HYB18L256160BF-75
WRITE
HY[B/E]18L256160B[C/F]-7.5
256-Mbit Mobile-RAM
Functional Description
Data Sheet
30
V1.4, 2004-04-30
Data for any WRITE burst may be concatenated with or truncated with a subsequent WRITE command. In either
case, a continuous flow of input data can be maintained. A WRITE command can be issued on any positive edge
of clock following the previous WRITE command. The first data element from the new burst is applied after either
the last element of a completed burst (
Figure 27
) or the last desired data element of a longer burst which is being
truncated (
Figure 28
). The new WRITE command should be issued x cycles after the first WRITE command,
where x equals the number of desired data elements.
Figure 27
Consecutive WRITE Bursts
Figure 28
Random WRITE Bursts
Non-consecutive WRITE bursts are shown in
Figure 29
.
Figure 29
Non-Consecutive WRITE Bursts
Ba A, Col n (b) = Bank A, Column n (b)
DI n (b) = Data In to column n (b)
Burst Length = 4 in the case shown.
3 subsequent elements of Data In are provided in the programmed order following DI n (b).
Command
NOP
NOP
NOP
NOP
NOP
NOP
NOP
WRITE
WRITE
CLK
Address
Ba A,
Col b
Ba A,
Col n
DQ
DI n
DI n+1
DI n+2
DI n+3
DI b
DI b+1
DI b+2
DI b+3
= Don't Care
Ba A, Col n etc. = Bank A, Column n etc.
DI n etc. = Data In to column n etc.
Burst Length = 4 in the case shown; bursts are terminated by consecutive WRITE commands.
3 subsequent elements of Data In are provided in the programmed order following DI m .
= Don't Care
CLK
Command
NOP
NOP
NOP
NOP
NOP
WRITE
WRITE
WRITE
Address
Ba A,
Col m
Ba A,
Col x
Ba A,
Col a
Ba A,
Col n
DQ
DI n
DI a
DI x
DI m
DI m+1
DI m+2
DI m+3
Ba A, Col n (b) = Bank A, Column n (b)
DI n (b) = Data In to column n (b)
Burst Length = 4 in the case shown.
3 subsequent elements of Data In are provided in the programmed order following DI n (b).
= Don't Care
CLK
WRITE
Command
NOP
NOP
NOP
NOP
NOP
NOP
NOP
WRITE
Ba A,
Col n
Address
Ba A,
Col b
DI b
DQ
DI n
DI n+1
DI n+2
DI n+3
DI b+1
DI b+2
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