參數(shù)資料
型號(hào): HYB18L256160BF-75
廠商: INFINEON TECHNOLOGIES AG
英文描述: DRAMs for Mobile Applications
中文描述: 針對(duì)移動(dòng)應(yīng)用的DRAM
文件頁數(shù): 19/49頁
文件大小: 1327K
代理商: HYB18L256160BF-75
Data Sheet
19
V1.4, 2004-04-30
HY[B/E]18L256160B[C/F]-7.5
256-Mbit Mobile-RAM
Functional Description
2.4.3
MODE REGISTER SET
Figure 7
Mode Register Set Command
The Mode Register and Extended Mode Register are
loaded via inputs A0 - A12 (see mode register
descriptions in
Chapter 2.2
). The MODE REGISTER
SET command can only be issued when all banks are
idle and no bursts are in progress. A subsequent
executable command cannot be issued until
t
MRD
is
met.
Figure 8
Mode Register Definition
= Don't Care
CS
CKE
(High)
CLK
A0-A12
Code
BA0,BA1
Code
WE
CAS
RAS
Table 8
Parameter
Timing Parameters for Mode Register Set Command
Symbol
- 7.5
Units
Notes
min.
2
max.
MODE REGISTER SET command period
t
MRD
t
CK
Code = Mode Register / Extended Mode Register selection
(BA0, BA1) and op-code (A0 - A12)
t
MRD
= Don't Care
CLK
Command
MRS
NOP
Valid
Address
Code
Valid
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